BPX 61 OSRAM Opto Semiconductors Inc, BPX 61 Datasheet

Photodiodes PHOTODIODE

BPX 61

Manufacturer Part Number
BPX 61
Description
Photodiodes PHOTODIODE
Manufacturer
OSRAM Opto Semiconductors Inc
Type
Chipr
Datasheet

Specifications of BPX 61

Photodiode Material
Silicon
Peak Wavelength
850 nm
Half Intensity Angle Degrees
55 deg
Maximum Reverse Voltage
32 V
Maximum Power Dissipation
250 mW
Maximum Dark Current
30 nA
Maximum Rise Time
20 ns
Maximum Fall Time
20 ns
Package / Case
TO-5
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Photodiode Type
PIN
Polarity
Forward
Reverse Breakdown Voltage
32V
Forward Voltage
1.3V
Responsivity
0.62A/W
Dark Current (max)
30nA
Power Dissipation
250mW
Rise Time
20ns
Fall Time
20ns
Operating Temp Range
-40C to 125C
Operating Temperature Classification
Automotive
Mounting
Through Hole
Pin Count
2
Package Type
TO-5
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q62705P0025
Silizium-PIN-Fotodiode
Silicon PIN Photodiode
Lead (Pb) Free Product - RoHS Compliant
BPX 61
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
• Kurze Schaltzeit (typ. 20 ns)
• Hermetisch dichte Metallbauform (ähnlich
Anwendungen
• Lichtschranken für Gleich- und
• IR-Fernsteuerungen
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type
BPX 61
2007-03-30
von 400 nm bis 1100 nm
TO-5)
Wechsellichtbetrieb
Bestellnummer
Ordering Code
Q62702P0025
1
Features
• Especially suitable for applications from 400 nm
• Short switching time (typ. 20 ns)
• Hermetically sealed metal package (similar to
Application
• Photointerrupters
• IR-remote controls
• Industrial electronics
• For control and drive circuits
to 1100 nm
TO-5)

Related parts for BPX 61

BPX 61 Summary of contents

Page 1

... Lichtschranken für Gleich- und Wechsellichtbetrieb • IR-Fernsteuerungen • Industrieelektronik • „Messen/Steuern/Regeln“ Typ Bestellnummer Type Ordering Code BPX 61 Q62702P0025 2007-03-30 Features • Especially suitable for applications from 400 nm to 1100 nm • Short switching time (typ. 20 ns) • Hermetically sealed metal package (similar to TO-5) Application • ...

Page 2

... 2856 K) Symbol Symbol S λ S max λ A × × ϕ λ η BPX 61 Wert Einheit Value Unit °C – 40 … + 125 32 V 250 mW Wert Einheit Value Unit 70 (≥ 50) nA/Ix 850 nm 400 … 1100 nm 2 7.00 mm 2.65 × 2.65 mm × mm ± 55 Grad deg. 2 (≤ ...

Page 3

... Noise equivalent power = 10 V, λ = 850 λ = 850 nm V Nachweisgrenze, R Detection limit 2007-03- 2856 2856 K) (cont’d) Symbol Symbol 800 μ NEP D* 3 Wert Value 20 f 1.3 72 – 2.6 V 0.18 I 4.1 × 10 – 14 6.6 × BPX 61 Einheit Unit mV/K %/K W ----------- - Hz × ------------------------- - W ...

Page 4

... S % rel 400 500 600 700 800 900 nm 1100 λ Dark Current OHF00080 4000 Ι 3000 2000 1000 Directional Characteristics (ϕ) rel 2007-03-30 Photocurrent Open-Circuit Voltage = ( O Capacitance MHz OHF00081 100 Total Power Dissipation tot A Dark Current Ι BPX 61 OHF00082 80 ˚C 100 T A ...

Page 5

... Maßzeichnung Package Outlines 3.4 (0.134) 3.0 (0.118) 0.3 (0.012) max Approx. weight 2 g Maß (inch) / Dimensions in mm (inch). 2007-03-30 Chip position 1.75 (0.069) 1.55 (0.061) Cathode ø0.45 (0.018) 14.5 (0.571) 12.5 (0.492) 5 Radiant sensitive area GMOY6011 BPX 61 ...

Page 6

... If they fail reasonable to assume that the health of the user may be endangered. 2007-03-30 (nach CECC 00802) (acc. to CECC 00802 Welle 2. wave 2 K/s 5 K/s Zwangskühlung 2 K/s forced cooling 100 2 6 Normalkurve standard curve Grenzkurven limit curves 150 200 t with the express written approval of OSRAM OS. BPX 61 OHLY0598 s 250 ...

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