BP104 Vishay, BP104 Datasheet

Photodiodes 65 Degree 215mW

BP104

Manufacturer Part Number
BP104
Description
Photodiodes 65 Degree 215mW
Manufacturer
Vishay
Type
Silicon PIN Photodioder
Datasheets

Specifications of BP104

Peak Wavelength
950 nm
Lens Type
Epoxy
Photodiode Material
Silicon
Maximum Reverse Voltage
60 V
Maximum Power Dissipation
215 mW
Maximum Light Current
45 uA
Maximum Dark Current
30 nA
Maximum Rise Time
100 ns
Maximum Fall Time
100 ns
Package / Case
TO-5
Maximum Operating Temperature
+ 100 C
Wavelength Typ
950nm
Half Angle
65°
Dark Current
2nA
Diode Case Style
Top View
No. Of Pins
2
Operating Temperature Range
-40°C To +100°C
Mounting Type
Through Hole
Svhc
No SVHC (20-Jun-2011)
Breakdown Voltage Vbr
60V
Rohs Compliant
Yes
Photodiode Type
PIN
Polarity
Forward
Reverse Breakdown Voltage
60V
Dark Current (max)
30nA
Power Dissipation
215mW
Light Current
45uA
Rise Time
100ns
Fall Time
100ns
Mounting
Through Hole
Pin Count
2
Package Type
TO-5
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

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Silicon PIN Photodiode
Description
BP104 is a high speed and high sensitive PIN photo-
diode in a miniature flat plastic package. Its top view
construction makes it ideal as a low cost replacement
of TO-5 devices in many applications.
The epoxy package itself is an IR filter, spectrally
matched to GaAs or GaAs on GaAlAs IR emitters
flat case gives a high sensitivity at a wide viewing
angle.
Features
Absolute Maximum Ratings
T
Electrical Characteristics
T
Document Number 81500
Rev. 1.4, 20-Nov-06
• Large radiant sensitive area (A = 7.5 mm
• Wide angle of half sensitivity: ϕ = ± 65°
• High photo sensitivity
• Fast response times
• Small junction capacitance
• Plastic case with IR filter: (λ = 950 nm)
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
Reverse voltage
Power dissipation
Junction temperature
Storage temperature range
Soldering temperature
Thermal resistance
junction / ambient
Breakdown voltage
Reverse dark current
Diode capacitance
amb
amb
p
and WEEE 2002/96/EC
= 950 nm). The large active area combined with a
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
Parameter
T
t ≤ 3 s
I
V
V
V
R
amb
R
R
R
= 100 μA, E = 0
= 10 V, E = 0
= 0 V, f = 1 MHz, E = 0
= 3 V, f = 1 MHz, E = 0
≤ 25 °C
Test condition
Test condition
2
)
e3
Applications
Symbol
• High speed photo detector
V
C
C
(BR)
I
ro
D
D
Symbol
R
T
T
V
P
thJA
T
stg
sd
R
V
j
Min
60
- 55 to + 100
948386
Vishay Semiconductors
Value
Typ.
215
100
260
350
60
70
25
2
Max
30
40
BP104
www.vishay.com
K/W
Unit
mW
°C
°C
°C
V
Unit
nA
pF
pF
V
1

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BP104 Summary of contents

Page 1

... Silicon PIN Photodiode Description BP104 is a high speed and high sensitive PIN photo- diode in a miniature flat plastic package. Its top view construction makes it ideal as a low cost replacement of TO-5 devices in many applications. The epoxy package itself filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters (λ ...

Page 2

... BP104 Vishay Semiconductors Optical Characteristics °C, unless otherwise specified amb Parameter Open circuit voltage mW/cm e Short circuit current mW/cm e Reverse light current mW/ Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth = 10 V, λ = 950 nm V Noise equivalent power R Rise time λ = 820 nm ...

Page 3

... Figure 6. Relative Spectral Sensitivity vs. Wavelength 0° 10° 1.0 0.9 0.8 0.7 0.6 0.4 0.2 0 0.2 94 8406 Figure 7. Relative Radiant Sensitivity vs. Angular Displacement Document Number 81500 Rev. 1.4, 20-Nov-06 100 1150 20° 30° 40° 50° 60° 70° 80° 0.6 0.4 BP104 Vishay Semiconductors www.vishay.com 3 ...

Page 4

... BP104 Vishay Semiconductors Package Dimensions in mm www.vishay.com 4 96 12186 Document Number 81500 Rev. 1.4, 20-Nov-06 ...

Page 5

... Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 81500 Rev. 1.4, 20-Nov-06 and may do so without further notice. BP104 Vishay Semiconductors www.vishay.com 5 ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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