BP 104 S-Z OSRAM Opto Semiconductors Inc, BP 104 S-Z Datasheet

Photodiodes PHOTODIODE, SMT

BP 104 S-Z

Manufacturer Part Number
BP 104 S-Z
Description
Photodiodes PHOTODIODE, SMT
Manufacturer
OSRAM Opto Semiconductors Inc
Type
Chipr
Datasheet

Specifications of BP 104 S-Z

Photodiode Material
Silicon
Peak Wavelength
850 nm
Half Intensity Angle Degrees
60 deg
Maximum Reverse Voltage
20 V
Maximum Power Dissipation
150 mW
Maximum Light Current
55 uA
Maximum Dark Current
30 nA
Maximum Rise Time
20 ns
Maximum Fall Time
20 ns
Package / Case
DIL-SMT-2
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Photodiode Type
PIN
Polarity
Forward
Reverse Breakdown Voltage
20V
Forward Voltage
1.3V
Responsivity
0.62A/W
Dark Current (max)
30nA
Power Dissipation
150mW
Light Current
55uA
Rise Time
20ns
Fall Time
20ns
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
2
Package Type
SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q65110A2626
Silizium-PIN-Fotodiode
Silicon PIN Photodiode
Lead (Pb) Free Product - RoHS Compliant
BP 104 S, BP 104 SR
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
• Kurze Schaltzeit (typ. 20 ns)
• Geeignet für Reflow-Löten
• SMT-fähig
Anwendungen
• Lichtschranken
• IR-Fernsteuerungen
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type
BP 104 S
BP 104 SR
2007-04-18
von 400 nm bis 1100 nm
Bestellnummer
Ordering Code
Q65110A2626
Q65110A4262
BP 104 S
Fotostrom, E
Photocurrent
Ip (
55 (≥40)
55 (≥40)
µ
A)
1
Features
• Especially suitable for applications from
• Short switching time (typ. 20 ns)
• Suitable for reflow soldering
• Suitable for SMT
Applications
• Photointerrupters
• IR remote controls
• Industrial electronics
• For control and drive circuits
v
=1000 lx, standard light A, V
400 nm to 1100 nm
BP 104 SR
R
= 5 V

Related parts for BP 104 S-Z

BP 104 S-Z Summary of contents

Page 1

... Silizium-PIN-Fotodiode Silicon PIN Photodiode Lead (Pb) Free Product - RoHS Compliant BP 104 S, BP 104 SR Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm • Kurze Schaltzeit (typ. 20 ns) • Geeignet für Reflow-Löten • SMT-fähig Anwendungen • Lichtschranken • IR-Fernsteuerungen • ...

Page 2

... T = 2856 K) Symbol Symbol I P λ S max λ A × × ϕ λ η 104 S, BP 104 SR Wert Einheit Value Unit ° C – 40 … + 100 20 V 150 mW Wert Einheit Value Unit 55 (≥40) nA/lx 850 nm 400 … 1100 nm 2 4.84 mm 2.20 × 2.20 mm × mm ± ...

Page 3

... Rauschäquivalente Strahlungsleistung Noise equivalent power = 10 V, λ = 850 λ = 850 nm V Nachweisgrenze, R Detection limit 2007-04- 2856 2856 K) (cont’d) Symbol Symbol 800 µ NEP 104 S, BP 104 SR Wert Einheit Value Unit µ 1 – 2.6 mV/K 0.18 %/K 3.6 × 10 – ----------- - Hz 6.1 × × -------------------------- - W ...

Page 4

... Photocurrent Open-Circuit Voltage 3 10 µ A Ι Ι Capacitance MHz ϕ 1.0 0.8 0.6 0.4 0 100 4 BP 104 S, BP 104 Total Power Dissipation tot A OHF02283 4 10 160 tot 140 3 120 10 100 Dark Current OHF01778 3 10 Ι OHF01402 ...

Page 5

... Photosensitive area Cathode lead 2.20 (0.087) x 2.20 (0.087) GEOY6861 Chip position 1.1 (0.043) 0.9 (0.035) 6.7 (0.264) 6.2 (0.244) 4.5 (0.177) 4.3 (0.169) 1.6 (0.063) ±0.2 (0.008) Photosensitive area Cathode lead 2.20 (0.087) x 2.20 (0.087) GPLY7049 5 BP 104 S, BP 104 SR ...

Page 6

... J-STD-020C) (acc. to J-STD-020C) Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile 120 s max 100 150 2 with the express written approval of OSRAM OS 104 S, BP 104 SR OHLA0687 +0 ˚C 260 ˚C -5 ˚C 245 ˚C ±5 ˚C +5 ˚C 235 ˚C -0 ˚ min 30 s max ...

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