BPW 34 OSRAM Opto Semiconductors Inc, BPW 34 Datasheet

Photodiodes PHOTODIODE T/H

BPW 34

Manufacturer Part Number
BPW 34
Description
Photodiodes PHOTODIODE T/H
Manufacturer
OSRAM Opto Semiconductors Inc
Type
Chipr
Datasheet

Specifications of BPW 34

Photodiode Material
Silicon
Peak Wavelength
850 nm
Half Intensity Angle Degrees
60 deg
Maximum Reverse Voltage
32 V
Maximum Power Dissipation
150 mW
Maximum Light Current
80 uA
Maximum Dark Current
30 nA
Maximum Rise Time
20 ns
Maximum Fall Time
20 ns
Package / Case
DIL-2
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Photodiode Type
PIN
Polarity
Reverse
Reverse Breakdown Voltage
32V
Forward Voltage
1.3V
Responsivity
0.62A/W
Dark Current (max)
30nA
Power Dissipation
150mW
Light Current
80uA
Rise Time
20ns
Fall Time
20ns
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Mounting
Through Hole
Pin Count
2
Package Type
DIL
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q62702P0073
Silizium-PIN-Fotodiode; in SMT und als Reverse Gullwing
Silicon PIN Photodiode; in SMT and as Reverse Gullwing
Lead (Pb) Free Product - RoHS Compliant
BPW 34, BPW 34 S, BPW 34 SR
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
• Kurze Schaltzeit (typ. 20 ns)
• DIL-Plastikbauform mit hoher Packungsdichte
• BPW 34 S/BPW 34 SR: geeignet für Reflow
Anwendungen
• Lichtschranken für Gleich- und
• IR-Fernsteuerungen
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type
BPW 34
BPW 34 S
BPW 34 SR
2007-05-23
BPW 34
von 400 nm bis 1100 nm
Löten
Wechsellichtbetrieb
Bestellnummer
Ordering Code
Q62702P0073
Q65110A1209
Q65110A2701
BPW 34 S
Fotostrom, E
Photocurrent
Ip (
80 (≥50)
80 (≥50)
80 (≥50)
1
µ
A)
Features
• Especially suitable for applications from
• Short switching time (typ. 20 ns)
• DIL plastic package with high packing density
• BPW 34 S/BPW 34 SR: suitable for reflow
Applications
• Photointerrupters
• IR remote controls
• Industrial electronics
• For control and drive circuits
400 nm to 1100 nm
soldering
v
=1000 lx, standard light A, V
BPW 34 SR
R
= 5 V

Related parts for BPW 34

BPW 34 Summary of contents

Page 1

... Features • Especially suitable for applications from 400 nm to 1100 nm • Short switching time (typ. 20 ns) • DIL plastic package with high packing density • BPW 34 S/BPW 34 SR: suitable for reflow soldering Applications • Photointerrupters • IR remote controls • Industrial electronics • ...

Page 2

... Fläche Dimensions of radiant sensitive area Halbwinkel Half angle V Dunkelstrom Dark current Spektrale Fotoempfindlichkeit, λ = 850 nm Spectral sensitivity Quantenausbeute, λ = 850 nm Quantum yield E Leerlaufspannung, = 1000 Ix v Open-circuit voltage 2007-05-23 BPW 34, BPW 34 S, BPW 34 SR Symbol Symbol stg tot T = 2856 2856 K) Symbol Symbol S λ ...

Page 3

... Noise equivalent power = 10 V, λ = 850 λ = 850 nm V Nachweisgrenze, R Detection limit 2007-05- 2856 2856 K) (cont’d) Symbol Symbol 800 µ NEP D* 3 BPW 34, BPW 34 S, BPW 34 SR Wert Einheit Value Unit µ 1 – 2.6 mV/K 0.18 %/K 4.1 × 10 – ----------- - Hz 6.6 × -------------------------- - × ...

Page 4

... Photocurrent Open-Circuit Voltage µ A Ι Ι Capacitance MHz 100 OHF01402 ϕ 1.0 0.8 0.6 0.4 0 100 4 BPW 34, BPW 34 S, BPW Total Power Dissipation tot A OHF01066 4 160 tot 140 3 120 10 100 Dark Current OHF00081 3 10 Ι 120 OHF00958 60 80 ˚ ...

Page 5

... Chip position 6.7 (0.264) 6.2 (0.244) 4.5 (0.177) 4.3 (0.169) 1.8 (0.071) Photosensitive area 2.65 (0.104) x 2.65 (0.104) 5 BPW 34, BPW 34 S, BPW 34 SR Chip position 0 ... 5˚ 5.08 (0.200) spacing GEOY6643 1.1 (0.043) 0.9 (0.035) ±0.2 (0.008) Cathode lead ...

Page 6

... BPW 34 SR Maß (inch) / Dimensions in mm (inch). 2007-05-23 BPW 34, BPW 34 S, BPW 34 SR Chip position 1.1 (0.043) 0.9 (0.035) 6.7 (0.264) 6.2 (0.244) 4.5 (0.177) 4.3 (0.169) 1.8 (0.071) ±0.2 (0.008) Photosensitive area Cathode lead 2.65 (0.104) x 2.65 (0.104) GEOY6916 6 ...

Page 7

... Welle 1. wave ca 200 K/s 5 K/s C Zwangskühlung 2 K/s forced cooling 50 100 7 BPW 34, BPW 34 S, BPW 34 SR Vorbehandlung nach JEDEC Level 4 Preconditioning acc. to JEDEC Level 4 (nach J-STD-020C) (acc. to J-STD-020C) 260 ˚C 245 ˚C 235 ˚ min 30 s max Ramp Down 6 K/s (max) ...

Page 8

... Life support devices or systems are intended ( implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail reasonable to assume that the health of the user may be endangered. 2007-05-23 BPW 34, BPW 34 S, BPW with the express written approval of OSRAM OS. ...

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