AD800-8-S1 Pacific Silicon Sensor, AD800-8-S1 Datasheet
AD800-8-S1
Manufacturer Part Number
AD800-8-S1
Description
Photodiodes High Speed Si APD 800um Active Area
Manufacturer
Pacific Silicon Sensor
Type
Silicon Avalanche Photodiodesr
Datasheet
1.AD800-8-S1.pdf
(2 pages)
Specifications of AD800-8-S1
Peak Wavelength
780 nm
Maximum Power Dissipation
100 mW
Maximum Dark Current
6 nA
Maximum Rise Time
0.28 ns
Package / Case
TO-52-S1
Mounting Style
Through Hole
Product
Ambient Light Sensor
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
06-017
FEATURES
• ∅ 800 µm active area
• Blue enhanced
• High QE at blue range
• Fast rise time
ELECTRO-OPTICAL CHARACTERISTICS @ 23 °C
Disclaimer: Due to our policy of continued development, specifications are subject to change without notice.
7/28/2010
ABSOLUTE MAXIMUM RATING
SYMBOL
T
I
SOLDERING
PH
SYMBOL
T
T
(DC)
STG
OP
∆ƒ
NEP
V
I
C
t
D
BR
3dB
r
PARAMETER
Storage Temp
Operating Temp
Soldering Temp
10 seconds
Electrical Power
Dissipation @ 22°C
Optical Peak Value,
once for 1 second
Continuous Optical
Operation
≤ 1 mA for signal 50 µs
“on” / 1 ms “off”
CHARACTERISTIC
Dark Current
Capacitance
Breakdown Voltage
Temperature Coefficient of V
Responsivity
Bandwidth
Rise Time
Optimum Gain
Noise Current
Max Gain
Noise Equivalent Power
DESCRIPTION
0.50 mm
Avalanche Photodiode with P on N construction.
Hermetically packaged in a case isolated TO-52-S1 with a
UV transmitting clear glass window cap.
MIN
-55
-40
-
-
-
2
High Speed, High Gain, Blue Enhanced
MAX
+125
+260
+85
100
200
250
BR
Ø5.40
UNITS
ACTIVE AREA: 0.50 mm
(800 µm DIA)
mW
mW
µA
°C
°C
°C
FRONTSIDE VIEW
TEST CONDITIONS
M = 100
M = 100
I
M = 100; λ = 400 nm
M = 100; λ = 500 nm
M = 100; λ = 600 nm
-3dB
λ = 410 nm; R
M = 100
M = 100; λ = 410 nm
D
= 2 µA
2
L
= 50 Ω
Pacific Silicon Sensor Series 11 Data Sheet
Ø 4.70
50
45
40
35
30
25
20
15
10
5
0
200
Ø3.90
VIEWING
ANGLE
64°
SPECTRAL RESPONSE M=100
300
Part Description AD800-11-TO52-S1
400
5.2
APPLICATIONS
• Analytical equipment
• Scintillation
• Medical equipment
• High speed photometry
500
WAVELENGTH (nm)
2.70
MIN
100
200
---
---
---
---
---
---
---
---
50
---
---
600
92% of V
85% of V
75% of V
12.7
3 PL
700
±1
Ø0.46
3 PL
1.0 X 10
BR
BR
TYP
BR
0.88
0.25
200
175
500
ANODE
1.0
2.5
PIN 1
800
25
35
40
---
1
CASE
PIN 4
-14
BACKSIDE VIEW
900
Order # 06-112
Ø 2.54
PIN CIRCLE
MAX
1000
5.0
80
---
---
---
---
---
---
---
---
---
---
---
Page 1 of 2
PIN 3
CATHODE
1100
UNITS
pA/Hz
W/Hz
MHz
A/W
V/K
nA
pF
ns
V
1/2
1/2
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AD800-8-S1 Summary of contents
Page 1
... M = 100 M = 100 µ 100; λ = 400 100; λ = 500 100; λ = 600 nm -3dB λ = 410 nm Ω 100 M = 100; λ = 410 nm Part Description AD800-11-TO52-S1 Order # 06-112 Ø 2.54 PIN 1 ANODE PIN CIRCLE Ø0. PIN 4 2.70 ±1 CASE 5.2 12.7 BACKSIDE VIEW 3 PL APPLICATIONS • ...
Page 2
... Storage - Store devices in conductive foam. • Avoid skin contact with window. • Clean window with Ethyl alcohol if necessary. • Do not scratch or abrade window. USA: Pacific Silicon Sensor, Inc. 5700 Corsa Avenue, #105 Westlake Village, CA 91362 USA Phone (818) 706-3400 Fax (818) 889-7053 Email: sales@pacific-sensor ...