AD1100-8-TO52-S1 Pacific Silicon Sensor, AD1100-8-TO52-S1 Datasheet

Photodiodes High Speed Si APD 130um Active Area

AD1100-8-TO52-S1

Manufacturer Part Number

AD1100-8-TO52-S1

Description

Photodiodes High Speed Si APD 130um Active Area

Manufacturer

Pacific Silicon Sensor

Type

NIR Enhanced Response Avalanche Photodioder

Datasheet

1.AD1100-9-TO52-S1.pdf (2 pages)

Specifications of AD1100-8-TO52-S1

Peak Wavelength

780 nm

Maximum Power Dissipation

100 mW

Maximum Dark Current

10 nA

Maximum Rise Time

1 ns

Package / Case

TO-52-S1

Mounting Style

Through Hole

Product

Ambient Light Sensor

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

06-025

Current page: 1 of 2
Download datasheet (238Kb)

FEATURES

• ∅ 1.13 mm active area

• Low slope multiplication curve

• High speed, low noise

• NIR enhanced

ELECTRO-OPTICAL CHARACTERISTICS @ 22 °C

* Measurement conditions: Setup of photo current 10 nA at M = 1 and irradiated by a 880 nm, 80 nm bandwidth LED. Increase the photo

Disclaimer: Due to our policy of continued development, specifications are subject to change without notice.

8/26/2010

ABSOLUTE MAXIMUM RATING

SYMBOL

current up to 1 µA, (M = 100) by internal multiplication due to an increasing bias voltage.

SOLDERING

SYMBOL

(DC)

STG

(AC)

∆ƒ

NEP

3dB

PARAMETER

Storage Temp

Operating Temp

Soldering Temp

10 seconds

Electrical Power

Dissipation @ 22°C

Optical Peak Value,

once for 1 second

Continuous Optical

Operation

Pulsed Signal Input

50 µs “on” / 1 ms “off”

CHARACTERISTIC

Dark Current

Capacitance

Breakdown Voltage

Temperature Coefficient of V

Responsivity

Bandwidth

Rise Time

Optimum Gain

“Excess Noise” factor

“Excess Noise” index

Noise Current

Max Gain

Noise Equivalent Power

DESCRIPTION

1.0 mm

with N on P construction. Hermetically packaged in a

TO-52-S1 with a clear borosilicate glass window cap.

MIN

-55

-40

High Speed, Low Noise Avalanche Photodiode

MAX

+125

+100

+260

100

200

250

UNITS

Ø 5.40

µA

ACTIVE AREA: 1.00 mm

°C

TEST CONDITIONS

M = 100*

M = 100; = 0 V; λ = 905 nm

-3dB

M = 100

M = 100; λ = 905 nm

(1.13 mm DIA)

= 2 µA

FRONTSIDE VIEW

Pacific Silicon Sensor Series 9 Data Sheet

400

Ø 4.70

SPECTRAL RESPONSE at M = 100

Ø 3.00

500

Part Description AD1100-9-TO52-S1

VIEWING

ANGLE

92°

600

APPLICATIONS

• High speed optical

• Laser range finder

• Medical equipment

• High speed photometry

3.60

WAVELENGTH (nm)

2.70

MIN

180

200

communications

---

700

12.7

3 PL

±1

Ø0.46

3 PL

8.0 X 10

800

CATHODE

PIN 1

TYP

1300

1.55

0.15

240

4.0

3.0

0.3

2.5

0.2

---

CASE

PIN 4

-14

900

BACKSIDE VIEW

Order # 06-018

Ø 2.54

PIN CIRCLE

MAX

1000

---

Page 1 of 2

PIN 3

ANODE

1100

UNITS

pA/Hz

W/Hz

GHz

A/W

V/K

1/2

Related parts for AD1100-8-TO52-S1

AD1100-8-TO52-S1 Summary of contents

Page 1

... TEST CONDITIONS M = 100 100 µ 100 λ = 905 nm -3dB M = 100 M = 100 M = 100 M = 100 M = 100; λ = 905 nm Part Description AD1100-9-TO52-S1 Order # 06-018 PIN 1 Ø 2.54 PIN CIRCLE CATHODE Ø0. 92° VIEWING ANGLE PIN 4 2.70 CASE ±1 3.60 12.7 BACKSIDE VIEW ...

Page 2

... Storage - Store devices in conductive foam. • Avoid skin contact with window. • Clean window with Ethyl alcohol if necessary. • Do not scratch or abrade window. USA: Pacific Silicon Sensor, Inc. 5700 Corsa Avenue, #105 Westlake Village, CA 91362 USA Phone (818) 706-3400 Fax (818) 889-7053 Email: sales@pacific-sensor ...

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