H11N1M Fairchild Semiconductor, H11N1M Datasheet

High Speed Optocouplers Optocoupler LC Schmitt Trigger

H11N1M

Manufacturer Part Number
H11N1M
Description
High Speed Optocouplers Optocoupler LC Schmitt Trigger
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of H11N1M

Isolation Voltage
7.5 KV
Maximum Continuous Output Current
50 mA
Maximum Fall Time
12 us
Maximum Forward Diode Current
30 mA
Maximum Rise Time
300 ns
Output Device
Logic Gate Photo IC
Configuration
1 Channel
Maximum Baud Rate
5 MBps
Maximum Forward Diode Voltage
2 V
Maximum Reverse Diode Voltage
6 V
Maximum Power Dissipation
250 mW
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Package / Case
DIP-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
H11N1M_NL
©2005 Fairchild Semiconductor Corporation
H11N1M, H11N2M, H11N3M Rev. 1.0.2
H11N1M, H11N2M, H11N3M
6-Pin DIP High Speed Logic Optocouplers
Features
Applications
Schematic
CATHODE
High data rate, 5MHz typical (NRZ)
Free from latch up and oscilliation throughout voltage
and temperature ranges.
Microprocessor compatible drive
Logic compatible output sinks 16mA at 0.5V
maximum
Guaranteed on/off threshold hysteresis
Wide supply voltage capability, compatible with all
popular logic systems
High common mode transient immunity, 2000V/µs
minimum
Fast switching t
Underwriter Laboratory (UL) recognized—
file #E90700
VDE recognized—File#102497 – Add option V
(e.g., H11N1VM)
Logic to logic isolator
Programmable current level sensor
Line receiver—eliminate noise and transient problems
A.C. to TTL conversion—square wave shaping
Interfaces computers with peripherals
Isolated power MOS driver for power supplies
ANODE
2
1
3
r
= 7.5ns typical, t
f
= 12ns typical
6
5 GND
4 V
V
CC
O
Truth Table
Input
H
L
Description
The H11NXM series has a high speed integrated circuit
detector optically coupled to an AlGaAs infrared emitting
diode. The output incorporates a Schmitt trigger, which
provides hysteresis for noise immunity and pulse shap-
ing. The detector circuit is optimized for simplicity of
operation and utilizes an open collector output for
maximum application flexibility.
Package Outlines
Output
H
L
September 2009
www.fairchildsemi.com

Related parts for H11N1M

H11N1M Summary of contents

Page 1

... ANODE 2 CATHODE 3 ©2005 Fairchild Semiconductor Corporation H11N1M, H11N2M, H11N3M Rev. 1.0.2 Description The H11NXM series has a high speed integrated circuit detector optically coupled to an AlGaAs infrared emitting diode. The output incorporates a Schmitt trigger, which provides hysteresis for noise immunity and pulse shap- ing ...

Page 2

... Detector Power Dissipation @ 25°C D Derate Linearly from 25° Allowed Range Allowed Range Output Current O 4 ©2005 Fairchild Semiconductor Corporation H11N1M, H11N2M, H11N3M Rev. 1.0 25°C unless otherwise specified.) A Parameters 2 Value Units -40 to +150 °C -40 to +85 °C 260 for 10 sec °C 250 mW 2.94 mW/°C 30 ...

Page 3

... LED to be driven at a current greater than 3.2mA to guarantee the device will turn on. A 10% guard band is recommended to account for degradation of the LED over its lifetime. The maximum allowable LED drive current is 30mA. 2. H11N1 910 , H11N2 ©2005 Fairchild Semiconductor Corporation H11N1M, H11N2M, H11N3M Rev. 1.0 25°C unless otherwise specified.) A Test Conditions I = 10mA ...

Page 4

... Max. Working Insulation Voltage IORM V Highest Allowable Over Voltage IOTM External Creepage External Clearance Insulation Thickness RIO Insulation Resistance at Ts, V ©2005 Fairchild Semiconductor Corporation H11N1M, H11N2M, H11N3M Rev. 1.0.2 Parameter , 100% Production Test PR , Type and Sample Test = 500V IO 4 Min. Typ. Max. ...

Page 5

... I – INPUT CURRENT (mA) F Figure 4. Threshold Current vs. Temperature 1.2 1.0 0.8 0.6 0.4 0.2 0 – TEMPERATURE ( C) ©2005 Fairchild Semiconductor Corporation H11N1M, H11N2M, H11N3M Rev. 1.0 H11N1 270 0 Figure 1. Switching Test Circuit and Waveforms Figure 3. Threshold Current vs. Supply Voltage 1.4 1 ...

Page 6

... Typical Performance Curves Figure 6. Supply Current vs. Supply Voltage - STATE 10mA 2 OFF STATE – SUPPLY VOLTAGE (V) CC ©2005 Fairchild Semiconductor Corporation H11N1M, H11N2M, H11N3M Rev. 1.0.2 (Continued) Figure 7. LED Forward Voltage vs. Forward Current 100 1 - 1.2 1.4 1.6 1.8 V – FORWARD VOLTAGE (V) F www.fairchildsemi.com ...

Page 7

... Note: All dimensions in mm. ©2005 Fairchild Semiconductor Corporation H11N1M, H11N2M, H11N3M Rev. 1.0.2 0.4" Lead Spacing 6.10–6.60 7.62 (Typ.) 5.08 (Max.) 0.38 (Min.) 0.20–0.30 15° (Typ.) (0.86) 1.02–1.78 8.13– ...

Page 8

... Parts that do not have the ‘V’ option (see definition 3 above) that are marked with date code ‘325’ or earlier are marked in portrait format. ©2005 Fairchild Semiconductor Corporation H11N1M, H11N2M, H11N3M Rev. 1.0.2 Order Entry Identifier (Example) H11N1M ...

Page 9

... C 140 120 100 ©2005 Fairchild Semiconductor Corporation H11N1M, H11N2M, H11N3M Rev. 1.0.2 12.0 0.1 2.0 0.05 4.0 0.1 10.1 0.20 260 C Time above 183 Sec 1.822 C/Sec Ramp up rate 33 Sec 60 120 180 Time (s) 9 Ø ...

Page 10

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2005 Fairchild Semiconductor Corporation H11N1M, H11N2M, H11N3M Rev. 1.0.2 ® PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...

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