4N27SR2M Fairchild Semiconductor, 4N27SR2M Datasheet

Transistor Output Optocouplers Optocoupler Phototransistor

4N27SR2M
Manufacturer Part Number	4N27SR2M
Description	Transistor Output Optocouplers Optocoupler Phototransistor
Manufacturer	Fairchild Semiconductor
4N27SR2M datasheets	1. 4N27SR2M.pdf (9 pages)

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Warranty: 60 days

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Specifications of 4N27SR2M
Maximum Input Diode Current	60 mA	Maximum Reverse Diode Voltage	6 V
Output Device	Transistor With Base	Output Type	DC
Configuration	1	Input Type	DC
Maximum Collector Emitter Voltage	30 V	Maximum Collector Emitter Saturation Voltage	500 mV
Isolation Voltage	5250 Vrms	Maximum Forward Diode Voltage	1.5 V
Maximum Power Dissipation	150 mW	Maximum Operating Temperature	+ 100 C
Minimum Operating Temperature	- 40 C	Package / Case	SMDIP
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Other names	4N27SR2M_NL

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4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M,

H11A1M, H11A2M, H11A3M, H11A4M, H11A5M

General Purpose 6-Pin Phototransistor Optocouplers

Features

UL recognized (File # E90700, Volume 2)

VDE recognized (File # 102497)

– Add option V (e.g., 4N25VM)

Applications

Power supply regulators

Digital logic inputs

Microprocessor inputs

Schematic

PIN 1. ANODE

2. CATHODE

3. NO CONNECTION

4. EMITTER

5. COLLECTOR

6. BASE

4NXXM, H11AXM Rev. 1.0.2

Description

The general purpose optocouplers consist of a gallium

arsenide infrared emitting diode driving a silicon pho-

totransistor in a 6-pin dual in-line package.

Package Outlines

January 2009

www.fairchildsemi.com

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Related parts for 4N27SR2M
Part Number	Description	Manufacturer	Datasheet
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4N27SM	Transistor Output Optocouplers DIP-6 PHOTO TRANS	Fairchild Semiconductor	4N27SR2M.pdf (9 pages)
4N27SD	Transistor Output Optocouplers Optocoupler SM-DIP6 Phototransistor	Fairchild Semiconductor
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4N27SR2M Summary of contents
Page 1 ... NC PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2 Description The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon pho- totransistor in a 6-pin dual in-line package. Package Outlines January 2009 ... Page 2 ... Isolation Characteristics Symbol Characteristic V Input-Output Isolation Voltage ISO R Isolation Resistance ISO C Isolation Capacitance ISO Typical values 25°C A ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0 25°C unless otherwise speciﬁed) A Parameter = 25° 25° 25° 25°C unless otherwise speciﬁed) A Test Conditions ... Page 3 ... Collector to Emitter V Collector-Emitter CE (SAT) Saturation Voltage AC CHARACTERISTICS T Non-Saturated ON Turn-on Time T Turn-off Time OFF Typical values 25°C A ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2 (Continued 25°C unless otherwise speciﬁed) A Test Conditions Device I = 10mA 10V 4N35M, 4N36M 4N37M H11A1M H11A5M 4N25M, 4N26M ... Page 4 ... T - AMBIENT TEMPERATURE ( C) A Fig. 5 CTR vs. RBE (Saturated) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 10 100 R - BASE RESISTANCE (k BE ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2 1.6 1.4 1.2 1 100 C A 0.2 0.0 100 1.0 ... Page 5 ... R - BASE RESISTANCE (k BE TEST CIRCUIT I F INPUT R BE ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2 (Continued) 5.0 4.5 4.0 3.5 3.0 f 2.5 2.0 1.5 1.0 0.5 10 100 10 vs. R off BE 10000 ... Page 6 ... Surface Mount 6.10–6.60 8.43–9.90 3.28–3.53 5.08 (Max.) 0.38 (Min.) Note: All dimensions in mm. ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2 0.4" Lead Spacing 6.10–6.60 7.62 (Typ.) 5.08 (Max.) 0.38 (Min.) 0.20–0.30 15° (Typ.) (0.86) 1.02– ... Page 7 ... Parts that do not have the ‘V’ option (see deﬁnition 3 above) that are marked with date code ‘325’ or earlier are marked in portrait format. ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2 Order Entry Identiﬁer (Example) 4N25M ... Page 8 ... Reflow Profile 300 280 260 240 220 200 180 160 C 140 120 100 ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2 12.0 0.1 2.0 0.05 0.05 4.0 0.1 10.1 0.20 183 Sec 1.822 C/Sec Ramp up rate 33 Sec 60 120 180 Time (s) 8 Ø1.5 MIN 1 ... Page 9 ... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. FRFET Build it Now™ CorePLUS™ Global Power Resource CorePOWER™ Green FPS™ CROSSVOLT™ ...

4N27SR2M Summary of contents

Page 1
... NC PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2 Description The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon pho- totransistor in a 6-pin dual in-line package. Package Outlines January 2009 ...
Page 2
... Isolation Characteristics Symbol Characteristic V Input-Output Isolation Voltage ISO R Isolation Resistance ISO C Isolation Capacitance ISO *Typical values 25°C A ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0 25°C unless otherwise speciﬁed) A Parameter = 25° 25° 25° 25°C unless otherwise speciﬁed) A Test Conditions ...
Page 3
... Collector to Emitter V Collector-Emitter CE (SAT) Saturation Voltage AC CHARACTERISTICS T Non-Saturated ON Turn-on Time T Turn-off Time OFF * Typical values 25°C A ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2 (Continued 25°C unless otherwise speciﬁed) A Test Conditions Device I = 10mA 10V 4N35M, 4N36M 4N37M H11A1M H11A5M 4N25M, 4N26M ...
Page 4
... T - AMBIENT TEMPERATURE ( C) A Fig. 5 CTR vs. RBE (Saturated) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 10 100 R - BASE RESISTANCE (k BE ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2 1.6 1.4 1.2 1 100 C A 0.2 0.0 100 1.0 ...
Page 5
... R - BASE RESISTANCE (k BE TEST CIRCUIT I F INPUT R BE ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2 (Continued) 5.0 4.5 4.0 3.5 3.0 f 2.5 2.0 1.5 1.0 0.5 10 100 10 vs. R off BE 10000 ...
Page 6
... Surface Mount 6.10–6.60 8.43–9.90 3.28–3.53 5.08 (Max.) 0.38 (Min.) Note: All dimensions in mm. ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2 0.4" Lead Spacing 6.10–6.60 7.62 (Typ.) 5.08 (Max.) 0.38 (Min.) 0.20–0.30 15° (Typ.) (0.86) 1.02– ...
Page 7
... Parts that do not have the ‘V’ option (see deﬁnition 3 above) that are marked with date code ‘325’ or earlier are marked in portrait format. ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2 Order Entry Identiﬁer (Example) 4N25M ...
Page 8
... Reflow Profile 300 280 260 240 220 200 180 160 C 140 120 100 ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2 12.0 0.1 2.0 0.05 0.05 4.0 0.1 10.1 0.20 183 Sec 1.822 C/Sec Ramp up rate 33 Sec 60 120 180 Time (s) 8 Ø1.5 MIN 1 ...
Page 9
... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. FRFET Build it Now™ CorePLUS™ Global Power Resource CorePOWER™ Green FPS™ CROSSVOLT™ ...

4N27SR2M

4N27SR2M

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Specifications of 4N27SR2M

Related parts for 4N27SR2M

4N27SR2M Summary of contents

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