CNY173M Fairchild Semiconductor, CNY173M Datasheet

Transistor Output Optocouplers Optocoupler Hi Bvceo Phototransistor

CNY173M

Manufacturer Part Number
CNY173M
Description
Transistor Output Optocouplers Optocoupler Hi Bvceo Phototransistor
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of CNY173M

Maximum Fall Time
24 us
Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
6 V
Maximum Rise Time
6 us
Output Device
Transistor With Base
Output Type
DC
Configuration
1
Input Type
DC
Maximum Collector Emitter Voltage
70 V
Maximum Collector Emitter Saturation Voltage
400 mV
Isolation Voltage
5250 Vrms
Current Transfer Ratio
200 %
Maximum Forward Diode Voltage
1.65 V
Maximum Power Dissipation
250 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Package / Case
PDIP White
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
CNY173M_NL

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CNY173M
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
CNY173M
Quantity:
46 000
Part Number:
CNY173M/CNY17-3
0
©2006 Fairchild Semiconductor Corporation
CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1
CNY171M, CNY172M, CNY173M, CNY174M,
CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M,
MOC8106M, MOC8107M
Phototransistor Optocouplers
Features
Applications
Schematics
UL recognized (File # E90700, Vol. 2)
VDE recognized
– Add option V (e.g., CNY17F2VM)
– File #102497
Current transfer ratio in select groups
High BV
MOC810XM)
Closely matched current transfer ratio (CTR)
minimizes unit-to-unit variation.
Very low coupled capacitance along with no chip to
pin 6 base connection for minimum noise
susceptability (CNY17FXM, MOC810XM)
Power supply regulators
Digital logic inputs
Microprocessor inputs
Appliance sensor systems
Industrial controls
CATHODE
ANODE
NC
CEO
2
1
3
: 70V minimum (CNY17XM, CNY17FXM,
CNY17F1M/2M/3M/4M
MOC8106M/7M
6
5 COLLECTOR
4 EMITTER
NC
Description
The CNY17XM, CNY17FXM and MOC810XM devices
consist of a Gallium Arsenide IRED coupled with an NPN
phototransistor in a dual in-line package.
Package Outlines
CATHODE
ANODE
NC
2
1
3
CNY171M/2M/3M/4M
6
5
4 EMITTER
BASE
COLLECTOR
November 2009
www.fairchildsemi.com

Related parts for CNY173M

CNY173M Summary of contents

Page 1

... CNY171M, CNY172M, CNY173M, CNY174M, CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M, MOC8106M, MOC8107M Phototransistor Optocouplers Features UL recognized (File # E90700, Vol. 2) VDE recognized – Add option V (e.g., CNY17F2VM) – File #102497 Current transfer ratio in select groups High BV : 70V minimum (CNY17XM, CNY17FXM, CEO MOC810XM) Closely matched current transfer ratio (CTR) minimizes unit-to-unit variation ...

Page 2

... Continuous Collector Current C V Collector-Emitter Voltage CEO V Emitter Collector Voltage ECO P Detector Power Dissipation @ 25°C D Derate Linearly from 25°C ©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 Parameters 2 Value Units -40 to +150 °C -40 to +100 °C -40 to +125 ºC 260 for 10 sec ° ...

Page 3

... A Symbol DC Characteristics COUPLED (2) (CTR) Output Collector MOC8106M Current MOC8107M CNY17F1M CNY17F2M CNY17F3M CNY17F4M CNY171M CNY172M CNY173M CNY174M V Collector-Emitter CNY17XM/FXM CE(sat) Saturation Voltage MOC8106M/7M *All typicals 25°C A ©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC810XM Rev. 1.1 25°C Unless otherwise specified.) A Test Conditions ...

Page 4

... Current Transfer Ratio (CTR For test circuit setup and waveforms, refer to Figures 10 and 11. 4. For this test, Pins 1 and 2 are common, and Pins 4 are 5 are common. ©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 (Continued 25°C Unless otherwise specified.) ...

Page 5

... Max. Working Insulation Voltage Vpeak IORM V Highest Allowable Over Voltage Vpeak IOTM External Creepage External Clearance Insulation Thickness RIO Insulation Resistance at Ts, V ©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 Parameter , 100% Production Test PR , Type and Sample Test = 500V IO 5 Min. ...

Page 6

... BE Fig. 5 Switching Speed vs. Load Resistor 1000 I = 10mA 10V 25˚C A 100 T off 0.1 0 – LOAD RESISTOR (k ©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 Fig. 2 Normalized CTR vs. Ambient Temperature 1.4 Normalized 10mA F 1.2 1.0 0.8 0.6 0.4 Normalized to 0 -60 1.0 0.9 ...

Page 7

... R – BASE RESISTANCE ( INPUT Figure 10. Switching Time Test Circuit ©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 (Continued) vs. R off BE V 10V 2mA 100 L 10000 100000 Fig. 9 Collector-Emitter Saturation Voltage vs Collector Current 100 T = 25˚ ...

Page 8

... Surface Mount 6.10–6.60 8.43–9.90 3.28–3.53 5.08 (Max.) 0.38 (Min.) Note: All dimensions in mm. ©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 0.4" Lead Spacing 6.10–6.60 7.62 (Typ.) 5.08 (Max.) 0.38 (Min.) 0.20–0.30 15° (Typ.) (0.86) 1.02– ...

Page 9

... SR2 SR2V Marking Information Definitions ©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 Order Entry Identifier (Example) CNY171M Standard Through Hole Device CNY171SM Surface Mount Lead Bend CNY171SR2M Surface Mount; Tape and Reel CNY171TM 0.4" Lead Spacing CNY171VM IEC60747-5-2 CNY171TVM IEC60747-5-2, 0.4" ...

Page 10

... Reflow Profile 300 280 260 240 220 200 180 160 C 140 120 100 ©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 12.0 0.1 2.0 0.05 0.05 4.0 0.1 10.1 0.20 183 Sec 1.822 C/Sec Ramp up rate 33 Sec 60 120 180 Time (s) 10 Ø ...

Page 11

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Auto-SPM™ F-PFS™ FRFET Build it Now™ CorePLUS™ Global Power Resource CorePOWER™ ...

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