FOD817A3S

Manufacturer Part NumberFOD817A3S
DescriptionTransistor Output Optocouplers Opto Phototransistor Output SM-DIP4
ManufacturerFairchild Semiconductor
FOD817A3S datasheets

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Specifications of FOD817A3S

Maximum Fall Time18 usMaximum Input Diode Current50 mA
Maximum Reverse Diode Voltage6 VMaximum Rise Time18 us
Output DeviceTransistorOutput TypeDC
Configuration1Input TypeDC
Maximum Collector Emitter Voltage70 VMaximum Collector Emitter Saturation Voltage200 mV
Isolation Voltage5000 VrmsCurrent Transfer Ratio160 %
Maximum Forward Diode Voltage1.4 VMaximum Collector Current50 mA
Maximum Power Dissipation200 mWMaximum Operating Temperature+ 110 C
Minimum Operating Temperature- 55 CPackage / CasePDIP SMD Black
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Typical Electrical/Optical Characteristics
Fig. 7 Collector Current
vs. Collector-Emitter Voltage (FOD814)
50
I = 30mA
F
40
20 m A
Pc (M AX.)
30
10mA
20
5mA
10
1m A
0
0
10 20 30 40 50 60 70 80 90 100
COLLECTOR-EMITTER VOLTAGE V
Fig. 9 Relative Current Transfer Ratio
vs. Ambient Temperature
160
FOD814
I
= 1 mA
140
F
V
= 5V
CE
120
100
80
FOD817
I
= 5mA
F
60
V
= 5V
CE
40
20
0
-60 -40 -20
0 20 40 60 80 100 120
AMBIENT TEMPERATURE T
Fig. 11 LED Power Dissipation
vs. Ambient Temperature (FOD814)
100
80
60
40
20
0
-55
-40 -20
0
20 40 60 80 100 120
AMBIENT TEMPERATURE T A (°C)
©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 1.1.4
(Continued) (T
A
Ta= 25°C
(V)
CE
Fig. 10 Collector-Emitter Saturation Voltage
0.12
0.10
0.08
0.06
0.04
0.02
0.00
(°C)
A
100
80
60
40
20
0
-55
6
= 25°C Unless otherwise specified.)
Fig. 8 Collector Current vs.
Collector-Emitter Voltage (FOD817)
30
I I
= 30mA
Ta = 25°C
F
20mA
25
Pc(MAX.)
20
15
10mA
10
5m A
5
0
0
10 20 30 40 50 60 70 80 90
COLLECTOR-EMITTER VOLTAGE V
(V)
CE
vs. Ambient Temperature
I
= 20mA
F
I
= 1mA
C
-60 -40 -20
0 20 40 60 80 100 120
AMBIENT TEMPERATURE T A (°C)
Fig. 12 LED Power Dissipation
vs. Ambient Temperature (FOD817)
-40 -20
0
20 40 60 80 100 120
AMBIENT TEMPERATURE T A (°C)
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