MOC217M Fairchild Semiconductor, MOC217M Datasheet
MOC217M
Specifications of MOC217M
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MOC217M Summary of contents
Page 1
... N/C 3 N/C 4 ©2005 Fairchild Semiconductor Corporation MOC215M, MOC216M, MOC217M Rev. 1.0.1 Description These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through- the-board mounting ...
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... Notes: 1. Isolation Surge Voltage internal device dielectric breakdown rating. ISO 2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common. ©2005 Fairchild Semiconductor Corporation MOC215M, MOC216M, MOC217M Rev. 1.0 25°C Unless otherwise specified) A Rating = 25° 25°C ...
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... For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common rating of 2500 V for min. is equivalent to a rating of 3,000 V ISO AC(rms) 4. Current Transfer Ratio (CTR ©2005 Fairchild Semiconductor Corporation MOC215M, MOC216M, MOC217M Rev. 1.0 25°C unless otherwise specified) A Test Conditions I = 1.0mA ...
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... Fig. 5 Dark Current vs. Ambient Temperature 10000 V = 10V CE 1000 100 – AMBIENT TEMPERATURE ( C) A ©2005 Fairchild Semiconductor Corporation MOC215M, MOC216M, MOC217M Rev. 1.0 0.1 100 0.01 0.1 Fig. 4 Output Current vs. Collector-Emitter Voltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 ...
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... R – BASE RESISTANCE ( TEST CIRCUIT INPUT R BE Figure 10. Switching Time Test Circuit and Waveforms ©2005 Fairchild Semiconductor Corporation MOC215M, MOC216M, MOC217M Rev. 1.0.1 (Continued) vs. R off BE 1.0 0.9 0.8 0.7 0 20mA F 0.5 0.4 0.3 0.2 0.1 0.0 ...
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... Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/ ©2005 Fairchild Semiconductor Corporation MOC215M, MOC216M, MOC217M Rev. 1.0.1 8 0.164 (4.16) 0.144 (3.66) 1 ...
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... Option Order Entry Identifi R2V Marking Information Definitions ©2005 Fairchild Semiconductor Corporation MOC215M, MOC216M, MOC217M Rev. 1.0.1 V VDE 0884 R2 Tape and reel (2500 units per reel) R2V VDE 0884, Tape and reel (2500 units per reel Fairchild logo Device number VDE mark (Note: Only appears on parts ordered with VDE option – ...
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... Carrier Tape Specifications 3.50 0.20 0.30 MAX 8.3 0.10 0.1 MAX User Direction of Feed Dimensions in mm ©2005 Fairchild Semiconductor Corporation MOC215M, MOC216M, MOC217M Rev. 1.0.1 8.0 0.10 2.0 0.05 4.0 0.10 6.40 0.20 8 Ø1.5 MIN 1.75 0.10 5.5 0.05 12.0 0.3 5 ...
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... Maintained Above (T L Peak Body Package Temperature Time (t ) within 5°C of 260°C P Ramp-down Rate (T Time 25°C to Peak Temperature ©2005 Fairchild Semiconductor Corporation MOC215M, MOC216M, MOC217M Rev. 1.0.1 Max. Ramp-up Rate = 3°C/S Max. Ramp-down Rate = 6°C/S Tsmax Preheat Area Tsmin t s 120 240 Time 25° ...
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... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2005 Fairchild Semiconductor Corporation MOC215M, MOC216M, MOC217M Rev. 1.0.1 ® PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...