UPC8179TB-EV22 CEL, UPC8179TB-EV22 Datasheet

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UPC8179TB-EV22

Manufacturer Part Number
UPC8179TB-EV22
Description
RFID Modules & Development Tools For UPC8179TB-A at 2.2 GHz
Manufacturer
CEL
Datasheet

Specifications of UPC8179TB-EV22

Product
RFID Readers
Dimensions
50 mm x 50 mm x 1.6 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
• HIGH DENSITY SURFACE MOUNTING:
• SUPPLY VOLTAGE:
• HIGH EFFICIENCY:
• POWER GAIN:
• EXCELLENT ISOLATION:
• LOW CURRENT CONSUMPTION:
• OPERATING FREQUENCY:
• LIGHT WEIGHT:
APPLICATIOIN
• Buffer amplifiers for 0.1 to 2.4 GHz mobile communications
FEATURES
ELECTRICAL CHARACTERISTICS,
(Unless otherwise specified, T
SYMBOLS
systems.
6 Pin Super Minimold Package (2.0 x 1.25 x 0.9 mm)
V
P
P
P
G
G
G
ISL = 44 dB TYP at f = 1.0 GHz
ISL = 42 dB TYP at f = 1.9 GHz
ISL = 41 dB TYP at f = 2.4 GHz
I
I
7 mg (standard Value)
CC
CC
ISOL
RL
P
CC
O
O
O
P
P
P
GP
I
NF
CC
1dB
(1dB) = +3.0 dBm TYP at f = 1.0 GHz
(1dB) = +1.5 dBm TYP at f = 1.9 GHz
(1dB) = +1.0 dBm TYP at f = 2.4 GHz
= 13.5 dB TYP at f = 1.0 GHz
= 15.5 dB TYP at f = 1.9 GHz
= 15.5 dB TYP at f = 2.4 GHz
= 4.0 mA TYP AT VCC = 3.0 V
= 4.0 mA TYP AT VCC = 3.0 V
IN
= 2.4 to 3.3 V
Circuit Current (no input signal)
Power Gain,
Isolation,
Output Power at
1 dB gain
compression,
Noise Figure,
Input Return Loss,
(without matching
circuit)
PARAMETERS AND CONDITIONS
FOR MOBILE COMMUNICATIONS
A
= +25°C, V
PACKAGE OUTLINE
f = 1.0 GHz, P
f = 1.9 GHz, P
f = 2.4 GHz, P
f = 1.0 GHz, P
f = 1.9 GHz, P
f = 2.4 GHz, P
f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
f = 1.0 GHz, P
f = 1.9 GHz, P
f = 2.4 GHz, P
PART NUMBER
CC
IN
IN
IN
IN
IN
IN
IN
IN
IN
= V
= -30 dBm
= -30 dBm
= -30 dBm
= -30 dBm
= -30 dBm
= -30 dBm
= -30 dBm
= -30 dBm
= -30 dBm
OUT
CURRENT AMPLIFIER
= 3.0 V, Z
SILICON RFIC LOW
S
= Z
DESCRIPTION
NEC's UPC8179TB is a silicon monolithic integrated circuit
designed as amplifier for mobile communications. This IC can
realize low current consumption with external chip inductor
which can be realized on internal 50Ω wideband matched IC.
This low current amplifier uns on 3.0 V. This IC is manufactured
using NEC's 30 GHz fMAX UHS0 (Ultra High Speed Process)
silicon bipolar process. This process uses direct silicon nitride
passivation film and gold electrodes. These materials can
protect the chip surface from pollution and prevent corrosion/
migration. Thus this IC has exellent performance uniformity
and reliability.
L
= 50Ω, at LC matched Frequency)
UNITS
mA
dB
dB
dB
dB
dB
+20
+10
–10
–20
–30
–40
California Eastern Laboratories
0
0.1
Output match for best performance
at each frequency
POWER GAIN vs. FREQUENCY
V
CC
T
T
T
A
A
A
= 3.0 V
= -40°C
= +25°C
= +85°C
11.0
13.0
13.0
39.0
37.0
36.0
MIN
-2.0
-0.5
-3.0
2.9
4.0
4.0
6.0
1.0 GHz
0.3
UPC8179TB
UPC8179TB
1.0
1.9 GHz
TYP
13.5
15.5
15.5
44.0
42.0
41.0
S06
4.0
3.0
1.5
1.0
5.0
5.0
5.0
7.0
7.0
9.0
2.4 GHz
3.0
MAX
15.5
17.5
17.5
5.4
6.5
6.5
6.5

Related parts for UPC8179TB-EV22

UPC8179TB-EV22 Summary of contents

Page 1

... GHz, P SILICON RFIC LOW CURRENT AMPLIFIER DESCRIPTION NEC's UPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can be realized on internal 50Ω wideband matched IC. This low current amplifier uns on 3.0 V. This IC is manufactured using NEC's 30 GHz fMAX UHS0 (Ultra High Speed Process) silicon bipolar process ...

Page 2

ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Supply Voltage, Pins 4 & Circuit Current Power Dissipation D T Operating Temperature OP T Storage Temperature STG P Input Power IN Notes: 1. Operation in excess of ...

Page 3

TYPICAL PERFORMANCE CURVES GAIN vs. FREQUENCY +20 Vcc = 3 +25 ºC –10 –20 –30 –40 0.1 0.3 Frequency, f (GHz) INPUT RETURN LOSS vs. FREQUENCY 0 –5 – +25 ºC A –15 ...

Page 4

TYPICAL PERFORMANCE CURVES NOISE FIGURE vs. VOLTAGE 6 +85 ºC A 5.5 5 +25 ºC A 4.5 4 –40 ºC A 3.5 3.0 2.0 2.5 Voltage GAIN vs. FREQUENCY +20 Vcc = ...

Page 5

TYPICAL PERFORMANCE CURVES OUTPUT POWER vs. INPUT POWER + –40º +25ºC A –5 – +85ºC A –15 –20 –25 –30 –40 –35 –30 –25 –20 –15 –10 Input Power, P NOISE ...

Page 6

TYPICAL PERFORMANCE CURVES INPUT RETURN LOSS vs. FREQUENCY 0 –5 – +25ºC A –15 –20 – 3 –30 0.1 0.3 1.0 Frequency, f (GHz) OUTPUT POWER vs. INPUT POWER + 3.0 V ...

Page 7

... UPC8179TB TYPICAL SCATTERING PARAMETERS 1.0 G 3.0 G 2.0 G S11 3 4 OUT CC FREQUENCY S 11 GHz MAG ANG MAG 0.1 0.824 -17.1 1.181 0.2 0.692 -25.9 1.181 0.3 0.594 -29.2 1.247 0.4 0.533 -30.7 1.370 0.5 0.499 -31.1 1.514 0.6 0.474 -32.0 1.677 0.7 ...

Page 8

... ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD COMPONENT LIST 1.0 GHz Output Port Matching C 1000 0. COMPONENT LIST 1.9GHz Output Port Matching 1000 0. 3 COMPONENT LIST 2.4 GHz Output Port Matching 1000 1 2 AMP-4 IN Top View C 1 Mounting Direction AMP AMP UPC8179TB OUT OUT OUT ...

Page 9

TEST CIRCUITS <1> 1.0 GHz <2> 1.9 GHz <3> 2.4 GHz Vcc Ω Vcc ...

Page 10

... LEAD CONNECTIONS +0.1 0 INPUT 2. GND DOT ON BOTTOM SIDE 3. GND 4. OUTPUT 5. GND +0.1 0.15 -0.5 ORDERING INFORMATION (Units in mm) PART NUMBER UPC8179TB-E3-A Note: Embossed tape wide. Pins are in tape pull-out direction. 5-10 I DEMOD Q PLL I Q (Top View) (Bottom View QTY 3K/Reel Internet: http://WWW ...

Page 11

... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...

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