TGA1135B-SCC TriQuint, TGA1135B-SCC Datasheet

RF Amplifier 18-27GHz K Band HPA

TGA1135B-SCC

Manufacturer Part Number
TGA1135B-SCC
Description
RF Amplifier 18-27GHz K Band HPA
Manufacturer
TriQuint
Type
Power Amplifierr
Datasheet

Specifications of TGA1135B-SCC

Operating Frequency
18 GHz to 27 GHz
P1db
29 dBm
Operating Supply Voltage
13 V
Supply Current
720 mA
Maximum Power Dissipation
9.4 W
Package / Case
2.641 mm x 1.48 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
1006310

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TGA1135B-SCC
Manufacturer:
SHINDENGEN
Quantity:
201
Part Number:
TGA1135B-SCC
Manufacturer:
TriQuint Semiconductor
Quantity:
135
The TriQuint TGA1135B-SCC is a balanced two-
stage HPA MMIC design using TriQuint’s proven
0.25 um Power pHEMT process. The
TGA11135B is designed to support a variety of
millimeter wave applications including point-to-
point digital radio and LMDS/LMCS.
The balanced configuration two stage design
consists of a pair of 600 um input devices driving
a 4 x 600um output stage. Power combining is
achieved with on-chip Lange couplers.
The TGA1135B-SCC provides 29 dBm nominal
output power at 1dB compression across
18 - 27GHz. Typical small signal gain is 14 dB
across the band. Input and output return loss is
typically -15dB.
An on-chip power detector and reference diode
may be used for power monitoring/control and
bias control loops.
The TGA1135B-SCC requires minimum off-chip
components. Each device is 100% DC and RF
tested on-wafer to ensure performance
compliance. The device is available in chip form.
Lead-Free and ROHS Compliant.
Chip Dimensions 2.641 mm x 1.480 mm x 0.1016mm
Product Description
18-27 GHz 1W Power Amplifier
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
18
16
14
12
10
31.5
30.5
29.5
28.5
27.5
-2
-4
-6
8
6
4
2
0
Primary Applications
Key Features
32
31
30
29
28
27
13
16
14
17
0.25 um pHEMT Technology
14 dB Nominal Gain at 23GHz
29 dBm Nominal P1dB
37dBm OTOI typical
Typical 15dB Input/Output RL
Bias 6 - 7V @ 540 mA
On-chip power detector diode
Point-to-Point Radio
Point-to-Multipoint Communications
K Band Sat-Com
15
16
18
17
TGA1135B Fixtured Amplifier Typical Small Signal Data
19
18
TGA1135B Nominal Output Power
19
20
Wafer 993150303, Idq=540mA
Product Datasheet
Wafer 993150303, 6V/540mA
20
21
Frequency (GHz)
TGA1135B-SCC
21
Frequency (GHz)
22
22
23
23
24
24
25
February 14, 2008
26
25
27
Note: 1 dB of
compression not
reached on some parts
at 27, 27.5 GHz
26
28
29
VD = 7V
27
30
VD = 6V
28
31
1
32
29

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TGA1135B-SCC Summary of contents

Page 1

... GHz 1W Power Amplifier Chip Dimensions 2.641 mm x 1.480 mm x 0.1016mm Product Description The TriQuint TGA1135B-SCC is a balanced two- stage HPA MMIC design using TriQuint’s proven 0.25 um Power pHEMT process. The TGA11135B is designed to support a variety of millimeter wave applications including point-to- point digital radio and LMDS/LMCS ...

Page 2

... TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com TABLE I MAXIMUM RATINGS . TABLE II DC SPECIFICATIONS (100 ° °C) A TEST CONDITIONS 2/ STD STD STD STD STD STD STD Product Datasheet February 14, 2008 TGA1135B-SCC VALUE NOTES 13 V 720 dBm 9 150 320 C 0 -65 to 150 C ) ...

Page 3

... A MEASUREMENT CONDITIONS 6V @ 540mA 18 – 20 GHz 21 – 24 GHz 25 – 27 GHz 18 – 27 GHz 18 – 27 GHz 18 – 27 GHz TABLE V RELIABILITY DATA BIAS CONDITIONS P V (V) I (mA 540 3.24 Product Datasheet February 14, 2008 TGA1135B-SCC VALUE MIN TYP MAX DISS θJC CH (W) (C/W) (° ...

Page 4

... Measured small signal data S21 -11 -13 S11 -15 -17 -19 -21 -23 - -11 -13 S22 -15 -17 -19 -21 -23 - TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com Product Datasheet 6V, 540mA Frequency (GHz) Wafer 993150303, 6V/540mA Frequency (GHz Frequency (GHz) February 14, 2008 TGA1135B-SCC 32 4 ...

Page 5

... Vd=7V/460mA, 400 freq=26GHz 350 300 250 200 150 100 Typical Output TOI Measured Data TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 22 24 Frequency (GHz Product Datasheet February 14, 2008 TGA1135B-SCC 5th 25th 50th 75th 95th 26 28 wafer 1 wafer 2 wafer ...

Page 6

... Q2b 1200µ µ µ µ m GND DQ Note current Note: If drain bias is from one side allowed into the “DQ” pad only, maximum Id is 440mA DC Schematic Product Datasheet February 14, 2008 TGA1135B-SCC VD DET OUT PWR DET RF OUT Reference diode 1 REF1 REF2 VD ...

Page 7

... Chip edge to bond pads dimensions are shown to center of bond pad RF I/O Pad: 200x100 mm DC Pads: 105x105 mm 2 Die Area: 3.909 mm TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com Product Datasheet February 14, 2008 TGA1135B-SCC 1.480 0.833 PWR DET (175x100 µ µ µ µ 0.373 RF OUT ...

Page 8

... TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com V 100pF det 10K Ω Ω Ω Ω Video out (V ) det Product Datasheet February 14, 2008 TGA1135B-SCC V bias 100pF RF OUT EG1135B External DC bias C=2pF 50 Ω Ω Ω Ω OUT OUT External coupler (-20dB) ...

Page 9

... DQ 0.01µ µ µ µ F 0.01µ µ µ µ F Product Datasheet February 14, 2008 TGA1135B-SCC Vd Output TFN Notes: 1. 1µ µ µ µ F capacitor on gate, drain lines not shown but required 2. 0.01µ µ µ µ F capacitor may be connected to Vd “ ...

Page 10

... C GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com Assembly Process Notes Product Datasheet February 14, 2008 TGA1135B-SCC 10 ...

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