TGA2521-SM-T/R TriQuint, TGA2521-SM-T/R Datasheet
TGA2521-SM-T/R
Specifications of TGA2521-SM-T/R
Related parts for TGA2521-SM-T/R
TGA2521-SM-T/R Summary of contents
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... Point-to-Point Radio • Point-to-Multipoint Communications 30 Product Description Product Description 15 The TriQuint TGA2521- three stage HPA MMIC design using TriQuint’s proven 0. Power pHEMT process. The TGA2521-SM is designed to support a variety of millimeter wave applications including point-to-point digital radio -15 and other K band linear gain applications. ...
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... Drain Current under RF Drive Vg1 Gate #1 Voltage Vg2 Gate #2 Voltage 1/ See assembly diagram for bias instructions. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Table I Table II Parameter 1/ Feb 2010 © Rev C Feb 2011 © Rev D TGA2521-SM Value Notes 115 mA 2/ 407 ...
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... GHz f = 17.7 – 23.6 GHz f = 17.7 – 23.6 GHz 17.7 – 23.6 GHz 17.7 – 23.6 GHz 17.7 – 23.6 GHz f = 17.7 – 23.6 GHz Feb 2010 © Rev C Feb 2011 © Rev D TGA2521-SM NOM MAX UNITS 25.5 dBm 23 ...
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... Pout = TBD dBm Pd = TBD W 30 Seconds 50 75 100 125 Channel Temperature ( C) Feb 2010 © Rev C Feb 2011 © Rev D TGA2521-SM Value Notes Tchannel = 200 ° C θjc = 29.5 ° C/W Tchannel = 127 ° 7.7E+6 Hrs θjc = TBD ° C/W Tchannel = TBD ° TBD Hrs 320 ° ...
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... Measured Data Measured Data Bias conditions 320 mA -0.5 V Typical TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com S21 S11 S22 20 25 Freq (GHz) Freq (GHz) Feb 2010 © Rev C Feb 2011 © Rev D TGA2521- -15 - ...
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... Measured Data Measured Data Bias conditions 320 mA -0.5 V Typical TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com TGA2521-SM S21 at -20 deg C S21 at +25 deg C S21 at +80 deg Freq (GHz) Freq (GHz) Feb 2010 © Rev C Feb 2011 © Rev ...
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... TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com TGA2521-SM S11 at -20 deg C S11 at +25 deg C S11 at +80 deg Freq (GHz) Freq (GHz) S22 at -20 deg C S22 at +25 deg C S22 at +80 deg Freq (GHz) Feb 2010 © Rev C Feb 2011 © Rev D ...
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... Bias conditions 320 mA -0.5 V (Id held constant from small TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Measured Data Measured Data signal to Psat) P1dB (dBm) Psat dB (dBm) Freq (GHz) Freq (GHz) signal to Psat) P1dB (dBm) Psat (dBm Freq (GHz) Feb 2010 © Rev C Feb 2011 © Rev D TGA2521- ...
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... Bias conditions 320 mA -0.5 V Typical (Id held constant from TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Measured Data Measured Data small signal to Psat) Pout at -20 deg C Pout at +25 deg C Pout at +80 deg Freq (GHz) Freq (GHz) Feb 2010 © Rev C Feb 2011 © Rev D TGA2521- ...
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... Measured Data Measured Data Bias conditions 320 mA -0.5 V Typical TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com TGA2521- Freq (GHz) Freq (GHz) Feb 2010 © Rev C Feb 2011 © Rev ...
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... Measured Data Measured Data Bias conditions 320 mA -0.5 V Typical Bias conditions 320 mA -0.5 V Typical TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com TGA2521-SM Freq (GHz) Freq (GHz -20 deg +25 deg +80 deg C Freq (GHz) Feb 2010 © Rev C Feb 2011 © Rev D 11 ...
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... PCB. See ‘Recommended Land Pattern’. Connected to 17 internally. Can be grounded or left GND open on the PCB. Backside paddle. Multiple vias on the PCB should GND be employed to minimize inductance and thermal resistance. See ‘Recommended Land Pattern’. Feb 2010 © Rev C Feb 2011 © Rev D TGA2521-SM PIN #1 IDENTIFICATION ...
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... Vg2 Vd2 (Pin 15) (Pin 14) (Pin 13) Vd1 Vd1 Vd2 Vd2 (Pin 6) (Pin 7) Bias Procedures Bias-down Procedure Turn off RF supply Reduce Vg1, Vg2 to -1.5V. Ensure Turn Vd1, Vd2 Turn Vg1, Vg2 Feb 2010 © Rev C Feb 2011 © Rev D TGA2521-SM RF OUT (Pin 11) 13 ...
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... Package edge to bond pad dimensions are shown to center of pad GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Mechanical Drawing Feb 2010 © Rev C Feb 2011 © Rev D TGA2521-SM 14 ...
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... TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Value -- 1.0 µF 0.01 µF 1092-01A-5 Southwest Microwave End Launch Connector Feb 2010 © Rev C Feb 2011 © Rev D TGA2521-SM Vg2 C4 C10 Vd2 C11 OUT Ω 0 Vd2 C12 C6 Description TriQuint TGA2521-SM 1206 SMT Ceramic Capacitor 0603 SMT Ceramic Capacitor 15 ...
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... GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Board Material: 10 mil thick Rogers 4350 Feb 2010 © Rev C Feb 2011 © Rev D TGA2521- C11 C10 J2 ...
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... GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Vd1 Vg2 Vg1 Vd2 NC Vd1 Vd2 NC Board Material: 10 mil thick Rogers 4350 Feb 2010 © Rev C Feb 2011 © Rev D TGA2521-SM RF OUT 17 ...
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... Max Peak Temperature Time within 5 °C of Peak Temperature Ramp-down Rate Part TGA2521-SM, TAPE AND REEL GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com ...