TGA4505 TriQuint, TGA4505 Datasheet
TGA4505
Specifications of TGA4505
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TGA4505 Summary of contents
Page 1
... The part is ideally suited for low cost emerging markets such as base station transmitters for satellite ground terminals and point to point radio. The TGA4505 is 100% DC and RF tested on-wafer to ensure performance compliance. Lead-free and RoHS compliant. Datasheet subject to change without notice TriQuint Semiconductor: www ...
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... TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com TABLE I MAXIMUM RATINGS TABLE II DC PROBE TEST ( nominal) ° A LIMITS MIN and V are negative. BVGS May 2009 © Rev - TGA4505 Value Notes - dBm 2/ 27.7 W 2/, 3/ 200 °C 4/, 5/ 320 °C -65 to 150 °C UNITS MAX 70.5 mA 79.5 mS 1.5 ...
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... Note: Table III Lists the RF Characteristics of typical devices as determined by fixtured measurements. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com TABLE III (T = 25°C, Nominal) A ( 2.1A) TEST TYPICAL CONDITION F = 24-31 GHz F = 24-31 GHz F = 24-31 GHz F = 24-31 GHz May 2009 © Rev - TGA4505 UNITS dBm 3 ...
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... DC power consumption rises with power delivered to load. Power dissipated and the temperature rise in the channel is 88 °C. Median Lifetime (Tm) vs. Channel Temperature TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com TABLE IV θ C/W) ° ° 128 4.7 May 2009 © Rev - TGA4505 Tm (HRS) 7.4E+6 4 ...
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... Measured Fixtured Data Bias Conditions 2.1 A TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 © Rev - TGA4505 5 ...
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... Measured Fixtured Data Bias Conditions 2.1 A Data taken @ 30 GHz TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 © Rev - TGA4505 6 ...
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... VD3 0.095 x 0.130 (0.004 x 0.005) 0.080 x 0.080 (0.003 x 0.003 0.205 x 0.145 (0.008 x 0.006) 0.105 x 0.105 (0.004 x 0.004) 0.145 x 0.105 (0.006 x 0.004) 0.080 x 0.080 (0.003 x 0.003 May 2009 © Rev - TGA4505 2.902 [0.114] 6 2.878 [0.113 2.874 [0.113] 1.511 [0.059] 8 ...
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... GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Both-Sided Biasing Option Vd1/Vd2 Vd3 .01uf .01uf 100pf 100pf 100pf 100pf .01uf .01uf Vd3 May 2009 © Rev - TGA4505 100pf 100pf 8 ...
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... GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Single-Side Biasing Option Vd1/Vd2 .01uf .01uf 100pf 100pf 100pf 100pf May 2009 © Rev - TGA4505 Vd3 .01uf 100pf RF OUT 100pf 9 ...
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... Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. • Maximum stage temperature is 200°C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Assembly Process Notes May 2009 © Rev - TGA4505 10 ...