TGA2502 TriQuint, TGA2502 Datasheet

RF Amplifier 13-15GHz 4W HPA

TGA2502

Manufacturer Part Number
TGA2502
Description
RF Amplifier 13-15GHz 4W HPA
Manufacturer
TriQuint
Type
Power Amplifierr
Datasheet

Specifications of TGA2502

Operating Frequency
13 GHz to 15 GHz
P1db
44 dBm
Operating Supply Voltage
8 V
Supply Current
2.3 A
Maximum Power Dissipation
18.4 W
Package / Case
2.5 mm to 2.7 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
1010291

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TGA2502
Manufacturer:
Schneider
Quantity:
200
Part Number:
TGA2502
Quantity:
27
Fixtured Measured Performance
Datasheet subject to change without notice
Chip Dimensions 2.5 mm x 2.7 mm x 0.1 mm
Bias Conditions: Vd = 7V, Idq = 1.3A
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
13 - 15 GHz 4W Power Amplifier
May 2009 © Rev -
May 2009 © Rev -
Key Features
Primary Applications
0.5 um pHEMT Technology
>25 dB Nominal Gain
>36 dBm Nominal Psat
44 dBm Nominal IP3 @ 14 GHz
Bias 7V @ 1.3A Idq, 2.1A under RF drive
Chip Dimensions 2.5mm x 2.7mm x 0.1 mm
Ku-Band VSAT Transmit
TGA2502
TGA2502
1

Related parts for TGA2502

TGA2502 Summary of contents

Page 1

... Nominal Gain • >36 dBm Nominal Psat • 44 dBm Nominal IP3 @ 14 GHz • Bias 7V @ 1.3A Idq, 2.1A under RF drive • Chip Dimensions 2.5mm x 2.7mm x 0.1 mm Primary Applications • Ku-Band VSAT Transmit May 2009 © Rev - May 2009 © Rev - TGA2502 TGA2502 1 ...

Page 2

... Junction operating temperature will directly affect the device mean time to failure (Tm). For maximum life it is recommended that junction temperatures be maintained at the lowest possible . levels TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com TABLE I MAXIMUM RATINGS 1/ Parameter May 2009 © Rev - TGA2502 Value Notes 8V 2 18.4 24 dBm 200 °C 3/, 4/ 320 ° ...

Page 3

... Output Return Loss (Linear Small Signal) Reverse Isolation CW Output Power @ Psat at 14.5Ghz Power Add Efficiency @ Psat P1dB Temperature Coeff TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com TABLE ± TYPICAL 7 1 <- -0.01 May 2009 © Rev - TGA2502 UNITS dB/100MHz dBm % 0 dB ...

Page 4

... Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted mil CuMo o Carrier baseplate temperature. Worst case condition with no RF applied, 100 power is dissipated. Median Lifetime (Tm) vs. Channel Temperature TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com TABLE (°C) 123 May 2009 © Rev - TGA2502 θ (°C/W) (HRS) 5.8 1.2E+7 4 ...

Page 5

... Measured Fixtured Data TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 © Rev - TGA2502 5 ...

Page 6

... Measured Fixtured Data TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 © Rev - TGA2502 6 ...

Page 7

... Measured Fixtured Data TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 © Rev - TGA2502 7 ...

Page 8

... Chip & Assembly Diagram Assembly Note: 10 Ω 470 μF • AuSn Vacuum Re-flow 1 μF TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com 1 μ OUT VD May 2009 © Rev - TGA2502 8 ...

Page 9

... GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Mechanical Drawing May 2009 © Rev - TGA2502 9 ...

Page 10

... Maximum stage temperature is 200 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Assembly Process Notes 0 C. May 2009 © Rev - TGA2502 0 C (30 seconds max). 10 ...

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