S1B Taiwan Semiconductor, S1B Datasheet
S1B
Manufacturer Part Number
S1B
Description
Rectifiers 1A 100V
Manufacturer
Taiwan Semiconductor
Datasheet
1.S1D.pdf
(2 pages)
Specifications of S1B
Product
Standard Recovery Rectifier
Configuration
Single
Reverse Voltage
100 V
Forward Voltage Drop
1.1 V
Recovery Time
1800 ns
Forward Continuous Current
1 A
Max Surge Current
30 A
Reverse Current Ir
5 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Package / Case
SMA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
R2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
S1B
Manufacturer:
TSC/台半
Quantity:
20 000
Company:
Part Number:
S1B-13-F
Manufacturer:
DIO
Quantity:
170 000
Part Number:
S1B-13-F
Manufacturer:
DIODES/美台
Quantity:
20 000
Company:
Part Number:
S1B-E3/51T
Manufacturer:
Vishay Semiconductors
Quantity:
5 125
Company:
Part Number:
S1B-E3/61T
Manufacturer:
Vishay Semiconductors
Quantity:
34 714
Part Number:
S1B-E3/61T
Manufacturer:
VISHAY/威世
Quantity:
20 000
Features
Mechanical Data
Maximum Ratings and Electrical Characteristics
Rating at 25
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 1.0A
Maximum DC Reverse Current @ T
at Rated DC Blocking Voltage @ T
Typical Reverse Recovery Time (Note 1)
Typical Junction Capacitance ( Note 2 )
Non-Repetitive Peak Reverse Avalanche
Engergy at 25
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
Notes:
Type Number
For surface mounted application
Glass passivated junction chip.
Low forward voltage drop
High current capability
Easy pick and place
High surge current capability
Plastic material used carries Underwriters
Laboratory Classification 94V-0
High temperature soldering:
260
High reliability grade (AEC Q101 qualified)
Case: Molded plastic
Terminals: Pure tin plated, lead free
solderable per J-STD-002B and
JESD22-B102D.
Polarity: Indicated by cathode band
Packaging: 12mm tape per EIA STD RS-481
W eight: 0.064 gram
@T
o
C / 10 seconds at terminals
1. Reverse Recovery Test Conditions: I
2. Measured at 1 MHz and Applied V
3. Measured on P.C. Board with 0.2” x 0.2” (5.0mm x 5.0mm) Copper Pad Areas.
L
o
o
C ambient temperature unless otherwise specified.
=110
C, I
AS
o
=1A, L=10mH
C
A
A
=125
=25
o
o
C
C
Symbol S1A
R
R
V
V
T
I
V
I
E
θJL
θJA
Trr
FSM
R
(AV)
V
RRM
RMS
Cj
STG
I
T
=4.0 Volts
DC
R
AS
F
J
F
=0.5A, I
- 456 -
50
35
50
R
=1.0A, I
S1B
100
100
1.0 AMP. Surface Mount Rectifiers
70
Dimensions in inches and (millimeters)
RR
=0.25A
S1D
200
140
200
27
75
-55 to +150
-55 to +150
40
SMA/DO-214AC
S1G
400
280
400
1.0
1.1
1.0
1.5
50
12
5
S1J
600
420
600
S1A - S1M
S1K
800
560
800
30
85
1000
1000
S1M
700
30
Version: E08
Units
o
C/W
mJ
uA
uA
uS
pF
o
o
V
V
V
A
A
V
C
C
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S1B Summary of contents
Page 1
... Storage Temperature Range Notes: 1. Reverse Recovery Test Conditions Measured at 1 MHz and Applied V 3. Measured on P.C. Board with 0.2” x 0.2” (5.0mm x 5.0mm) Copper Pad Areas. 1.0 AMP. Surface Mount Rectifiers Dimensions in inches and (millimeters) Symbol S1A S1B 50 100 V RRM ...
Page 2
RATINGS AND CHARACTERISTIC CURVES (S1A THRU S1M) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 1.2 1.0 0.8 0.6 0.4 0 100 o LEAD TEMPERATURE FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 100 50 20 ...