MBR20060CT GeneSiC Semiconductor, MBR20060CT Datasheet

Schottky (Diodes & Rectifiers) 60V 200A Schottky Recovery

MBR20060CT

Manufacturer Part Number

MBR20060CT

Description

Schottky (Diodes & Rectifiers) 60V 200A Schottky Recovery

Manufacturer

GeneSiC Semiconductor

Datasheet

1.MBR20060CT.pdf (2 pages)

Specifications of MBR20060CT

Product

Schottky Diodes

Peak Reverse Voltage

60 V

Forward Continuous Current

200 A

Max Surge Current

1500 A

Forward Voltage Drop

0.8 V

Maximum Reverse Leakage Current

1 uA

Operating Temperature Range

- 40 C to + 175 C

Mounting Style

SMD/SMT

Package / Case

Module

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MBR20060CT

Manufacturer:

MOTOROLA

Quantity:

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MBR20060CT

Manufacturer:

GeneSiC Semiconductor

Quantity:

135

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MBR20060CT

Manufacturer:

MOTOROLA

Quantity:

492

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MBR20060CTR

Manufacturer:

GeneSiC Semiconductor

Quantity:

135

Current page: 1 of 2
Download datasheet (521Kb)

www.genesicsemi.com

• High Surge Capability

• Types up to 100 V V

Repetitive peak reverse

voltage

RMS reverse voltage

DC blocking voltage

Continuous forward

current

Surge non-repetitive

forward current, Half

Sine Wave

Operating temperature

Storage temperature

Parameter

Diode forward voltage

Reverse current

Thermal resistance,

junction - case

Features

Maximum ratings, at T

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Thermal characteristics

Silicon Power

Schottky Diode

Parameter

RRM

Symbol

= 25 °C, unless otherwise specified ("R" devices have leads reversed)

F,SM

RRM

RMS

thJC

stg

= 25 °C, t

= 100 A, T

= 20 V, T

Conditions

≤ 136 °C

= 125 °C

= 8.3 ms

= 25 °C

MBR20045CT (R) MBR20060CT (R)

-40 to 175

1500

0.65

200

0.5

MBR20045CT thru MBR200100CTR

-40 to 175

1500

0.75

200

0.5

MBR20080CT (R)

Twin Tower Package

-40 to 175

1500

0.84

200

0.5

RRM

= 200 A

= 20 V - 100 V

MBR200100CT (R)

-40 to 175

1500

0.84

100

200

0.5

°C/W

Unit

°C

Related parts for MBR20060CT

MBR20060CT Summary of contents

Page 1

... Thermal resistance, R thJC junction - case www.genesicsemi.com MBR20045CT thru MBR200100CTR Conditions MBR20045CT (R) MBR20060CT ( ≤ 136 °C 200 ° 8.3 ms 1500 p -40 to 175 -40 to 175 Conditions MBR20045CT (R) MBR20060CT (R) = 100 °C 0. ° 125 °C 200 j 0 100 V RRM I = 200 A F Twin Tower Package MBR20080CT (R) ...

Page 2

MBR20045CT thru MBR200100CTR 2 ...

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