MBR20030CT GeneSiC Semiconductor, MBR20030CT Datasheet

Schottky (Diodes & Rectifiers) 30V 200A Schottky Recovery

MBR20030CT

Manufacturer Part Number
MBR20030CT
Description
Schottky (Diodes & Rectifiers) 30V 200A Schottky Recovery
Manufacturer
GeneSiC Semiconductor
Datasheet

Specifications of MBR20030CT

Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
200 A
Max Surge Current
1500 A
Forward Voltage Drop
0.75 V
Maximum Reverse Leakage Current
1 uA
Operating Temperature Range
- 40 C to + 175 C
Mounting Style
SMD/SMT
Package / Case
Module
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MBR20030CT
Manufacturer:
MOTOROLA
Quantity:
28
Part Number:
MBR20030CT
Manufacturer:
GeneSiC Semiconductor
Quantity:
135
Part Number:
MBR20030CT
Manufacturer:
MOTOROLA
Quantity:
726
Part Number:
MBR20030CTL
Quantity:
560
Part Number:
MBR20030CTR
Manufacturer:
GeneSiC Semiconductor
Quantity:
135
www.genesicsemi.com
• High Surge Capability
• Types up to 100 V V
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward
current
Surge non-repetitive
forward current, Half
Sine Wave
Operating temperature
Storage temperature
Parameter
Diode forward voltage
Reverse current
Thermal resistance,
junction - case
Features
Maximum ratings, at T
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Thermal characteristics
Silicon Power
Schottky Diode
Parameter
RRM
Symbol
Symbol
j
V
V
V
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
R
I
V
T
F,SM
V
RRM
RMS
T
I
I
thJC
DC
stg
R
F
F
j
T
V
I
V
C
F
R
R
= 25 °C, t
= 100 A, T
= 20 V, T
= 20 V, T
Conditions
T
Conditions
C
≤ 136 °C
p
j
j
j
= 125 °C
= 8.3 ms
= 25 °C
= 25 °C
MBR20020CT (R) MBR20030CT (R)
MBR20020CT (R) MBR20030CT (R)
-40 to 175
-40 to 175
1500
0.65
200
200
0.5
20
20
14
20
5
MBR20020CT thru MBR20040CTR
1
-40 to 175
-40 to 175
1500
0.65
200
200
0.5
30
30
21
30
5
MBR20035CT (R)
MBR20035CT (R)
Twin Tower Package
-40 to 175
-40 to 175
1500
0.65
200
200
0.5
35
35
25
35
5
V
I
F
RRM
= 200 A
= 20 V - 100 V
MBR20040CT (R)
MBR20040CT (R)
-40 to 175
-40 to 175
1500
0.65
200
200
0.5
40
40
28
40
5
°C/W
Unit
Unit
mA
°C
°C
V
V
V
V
A
A
V

Related parts for MBR20030CT

MBR20030CT Summary of contents

Page 1

... Thermal resistance, R thJC junction - case www.genesicsemi.com MBR20020CT thru MBR20040CTR Conditions MBR20020CT (R) MBR20030CT ( ≤ 136 °C 200 ° 8.3 ms 1500 p -40 to 175 -40 to 175 Conditions MBR20020CT (R) MBR20030CT (R) = 100 °C 0. ° 125 °C 200 j 0 100 V RRM I = 200 A F Twin Tower Package MBR20035CT (R) ...

Page 2

MBR20020CT thru MBR20040CTR 2 ...

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