IDT02S60C Infineon Technologies, IDT02S60C Datasheet

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IDT02S60C

Manufacturer Part Number
IDT02S60C
Description
Schottky (Diodes & Rectifiers) SiC Diode 600V 3A
Manufacturer
Infineon Technologies
Datasheet

Specifications of IDT02S60C

Product
Schottky Diodes
Peak Reverse Voltage
600 V
Forward Continuous Current
3 A
Max Surge Current
11.5 A
Configuration
Single
Forward Voltage Drop
2.4 V
Maximum Reverse Leakage Current
15 uA
Operating Temperature Range
- 55 C to + 175 C
Mounting Style
Through Hole
Package / Case
TO-220
Technology
thinQ!™ 2G
V
600.0 V
If (typ)
2.0 A
Qc (typ)
3.2 nC
Package
TO-220 (decapped middle leg)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IDT02S60CXK

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IDT02S60C
Manufacturer:
INFINEON
Quantity:
11 523
Part Number:
IDT02S60C
Manufacturer:
INF
Quantity:
20 000
Rev. 2.0
Features
• Revolutionary semiconductor material - Silicon Carbide
• No reverse recovery/ no forward recovery
• Temperature independent switching behavior
• High surge current capability
• Qualified according to JEDEC
• Breakdown voltage tested at 5mA
• Optimized for high temperature operation
thinQ! 2G Diode specially designed for fast switching applications like:
• CCM PFC
Maximum ratings
Parameter
Continuous forward current
RMS forward current
Surge non-repetitive forward current,
sine halfwave
Repetitive peak forward current
Non-repetitive peak forward current
i ²t value
Repetitive peak reverse voltage
Diode dv/dt ruggedness
Power dissipation
Operating and storage temperature
Mounting torque
2
Type
IDT02S60C
nd
Generation thinQ!
Package
PG-TO220-2-2
TM
SiC Schottky Diode
1)
for target applications
2)
Symbol Conditions
dv/ dt
I
I
I
I
I
∫i
V
P
T
F
F,RMS
F,SM
F,RM
F,max
2
j
RRM
tot
, T
dt
Marking
D02S60C
stg
T
T
f =50 Hz
T
T
T
T
T
T
T
T
V
T
M3 and M3.5 screws
page 1
C
C
C
C
j
C
C
C
C
j
C
R
=150 °C,
=25 °C
<120 °C
<70 °C
=25 °C, t
=150°C, t
=100 °C, D =0.1
=25 °C, t
=25 °C, t
=150°C, t
=25 °C
= 0….480V
p
p
p
p
p
=10 ms
=10 µs
=10 ms
=10 ms
=10 ms
Product Summary
V
Q
I
Pin 1
C
F
DC
c
Pin 2
A
-55 ... 175
Value
11.5
0.61
0.44
100
600
2.8
9.7
7.3
50
18
60
PG-TO220-2-2
2
3
IDT02S60C
600
3.2
2
Unit
A
A
V
V/ns
W
°C
Mcm
V
nC
A
2
2007-04-25
s

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IDT02S60C Summary of contents

Page 1

... =25 °C, t =10 ms ∫ =150° =25 °C RRM 0….480V dv =25 °C tot stg M3 and M3.5 screws page 1 IDT02S60C 600 V 3 PG-TO220-2-2 Pin 2 A Value Unit 2.8 11.5 9.7 7.3 100 2 0. 0.44 600 -55 ... 175 °C 60 Mcm 2007-04-25 ...

Page 2

... V =400 V,I ≤ F,max c di /dt =200 A/µ =150 ° MHz =300 MHz R V =600 MHz di/dt. No reverse recovery time constant t j LOAD page 2 IDT02S60C Values Unit min. typ. max 8.5 K 260 °C 600 - - V - 1.7 1.9 - 2.1 2.6 - 2.1 2.4 - 2.8 3 ...

Page 3

... C 4 Typ. forward characteristic in surge current mode I =f 150ºC 25ºC 100ºC 12 175º [V] F page 3 IDT02S60C ≤175 ° 0.1 0.3 0.5 0 125 T [°C] C =400 µs; parameter 175ºC -55ºC 150ºC 25ºC 100º [V] F 175 8 2007-04-25 ...

Page 4

... Typ. reverse current vs. reverse voltage I =f(V ) ≤ F,max parameter -10 10 100 700 1000 8 Typ. capacitance vs. reverse voltage C =f [s] P page 4 IDT02S60C j 175 °C 150 °C 100 °C 25 °C -55 °C 200 300 400 500 V [V] R =25 ° MHz [V] R 600 3 10 2007-04-25 ...

Page 5

... Typ. C stored energy E =f 1.8 1.5 1.3 1.0 0.8 0.5 0.3 0.0 0 100 200 V Rev. 2.0 300 400 500 600 [V] R page 5 IDT02S60C 2007-04-25 ...

Page 6

... Package Outline:PG-TO220-2-2 Rev. 2.0 page 6 IDT02S60C 2007-04-25 ...

Page 7

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 7 IDT02S60C 2007-04-25 ...

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