IDT04S60C Infineon Technologies, IDT04S60C Datasheet

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IDT04S60C

Manufacturer Part Number
IDT04S60C
Description
Schottky (Diodes & Rectifiers) 2ND GEN THINQ 600V SiC Schottky Diode
Manufacturer
Infineon Technologies
Datasheet

Specifications of IDT04S60C

Product
Schottky Diodes
Peak Reverse Voltage
600 V
Forward Continuous Current
4 A
Max Surge Current
32 A
Configuration
Single
Forward Voltage Drop
1.7 V
Maximum Reverse Leakage Current
50 uA
Operating Temperature Range
- 55 C to + 175 C
Mounting Style
Through Hole
Package / Case
TO-220
Technology
thinQ!™ 2G
V
600.0 V
If (typ)
4.0 A
Qc (typ)
8.0 nC
Package
TO-220 (decapped middle leg)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IDT04S60CXK

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IDT04S60C
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 2.0
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery/ No forward recovery
• No temperature influence on the switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
• Breakdown voltage tested at 5mA
thinQ! 2G Diode specially designed for fast switching applications like:
• CCM PFC
• Motor Drives
Maximum ratings, at T
Parameter
Continuous forward current
RMS forward current
Surge non-repetitive forward current,
sine halfwave
Repetitive peak forward current
Non-repetitive peak forward current
i ²t value
Repetitive peak reverse voltage
Diode dv/dt ruggedness
Power dissipation
Operating and storage temperature
Mounting torque
2
Type
IDT04S60C
nd
Generation thinQ!
j
Package
PG-TO220-2-2
=25 °C, unless otherwise specified
TM
SiC Schottky Diode
1)
for target applications
2)
Symbol Conditions
dv/ dt
I
I
I
I
I
∫i
V
P
T
F
F,RMS
F,SM
F,RM
F,max
2
j
RRM
tot
, T
dt
stg
T
f =50 Hz
T
T
T
T
T
V
T
M3 and M3.5 screws
page 1
C
C
j
C
C
C
C
R
=150 °C,
<140 °C
=25 °C, t
=100 °C, D =0.1
=25 °C, t
=25 °C, t
=25 °C
= 0….480V
p
p
p
=10 ms
=10 µs
=10 ms
Product Summary
V
Q
I
Marking
D04S60C
F
DC
c
Pin 1
C
-55 ... 175
Value
132
600
5.6
5.1
32
18
50
42
60
PG-TO220-2-2
4
Pin 2
A
IDT04S60C
600
8
4
Unit
A
A
V
V/ns
W
°C
Mcm
V
nC
A
2
2006-03-08
s

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IDT04S60C Summary of contents

Page 1

... I F,RM T =100 ° =25 °C, t =10 µs F,max =25 °C, t =10 ms ∫ RRM V = 0….480V dv =25 °C tot stg M3 and M3.5 screws page 1 IDT04S60C 600 PG-TO220-2-2 Pin 1 Pin Value Unit 132 2 5 600 -55 ... 175 °C 60 Mcm 2006-03-08 ...

Page 2

... V, T =150 ° =400 V,I ≤ F,max c di /dt =200 A/µ =150 ° MHz =300 MHz R V =600 MHz di/dt. No reverse recovery time constant t j LOAD page 2 IDT04S60C Values Unit min. typ. max 3.6 K 260 °C 600 - - V - 1.7 1 2.4 - 0.5 50 µ 500 , ...

Page 3

... C 4 Typ. forward characteristic in surge current mode I =f -55ºC 150ºC 25ºC 100º 175º F[V] page 3 IDT04S60C ≤175 ° thJC(max) F(max 100 125 150 175 T [°C] C =400 µs; parameter 175ºC 150ºC -55ºC 25ºC 100º F[V] ...

Page 4

... Typ. reverse current vs. reverse voltage I =f parameter 0 100 [A] 8 Typ. capacitance vs. reverse voltage C =f 200 175 150 125 100 [s] P page 4 IDT04S60C j 175 °C 150 °C 100 °C 25 °C -55 °C 200 300 400 500 V [V] R =25 ° MHz [V] R 600 3 10 2006-03-08 ...

Page 5

... Typ. C stored energy E =f 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 100 200 V Rev. 2.0 10 Typ. capacitance charge vs. current slope Q =f(di / 300 400 500 600 100 [V] R page 5 IDT04S60C =150 °C; I ≤ F,max 400 700 di /dt [A/µs] F 1000 2006-03-08 ...

Page 6

... Package Outline:PG-TO220-2-2 Rev. 2.0 page 6 IDT04S60C 2006-03-08 ...

Page 7

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 7 IDT04S60C 2006-03-08 ...

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