IDT10S60C Infineon Technologies, IDT10S60C Datasheet

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IDT10S60C

Manufacturer Part Number
IDT10S60C
Description
Schottky (Diodes & Rectifiers) 2ND GEN THINQ 600V SiC Schottky Diode
Manufacturer
Infineon Technologies
Datasheet

Specifications of IDT10S60C

Product
Schottky Diodes
Peak Reverse Voltage
600 V
Forward Continuous Current
10 A
Max Surge Current
84 A
Configuration
Single
Forward Voltage Drop
1.7 V
Maximum Reverse Leakage Current
140 uA
Operating Temperature Range
- 55 C to + 175 C
Mounting Style
Through Hole
Package / Case
TO-220
Technology
thinQ!™ 2G
V
600.0 V
If (typ)
10.0 A
Qc (typ)
24.0 nC
Package
TO-220 (decapped middle leg)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IDT10S60CXK

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IDT10S60C
Manufacturer:
ROHM
Quantity:
90 000
Rev. 2.0
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery/ No forward recovery
• No temperature influence on the switching behavior
• High surge current capability
• Pb-free lead plating; RoHs compliant
• Qualified according to JEDEC
• Breakdown voltage tested at 5mA
thinQ! 2G Diode specially designed for fast switching applications like:
• CCM PFC
• Motor Drives
Maximum ratings, at T
Parameter
Continuous forward current
RMS forward current
Surge non-repetitive forward current,
sine halfwave
Repetitive peak forward current
Non-repetitive peak forward current
i²t value
Repetitive peak reverse voltage
Diode ruggedness dv/dt
Power dissipation
Operating and storage temperature
Mounting torque
2
Type
IDT10S60C
nd
Generation thinQ!
j
Package
PG-TO220-2-2
=25 °C, unless otherwise specified
TM
SiC Schottky Diode
1)
for target applications
2)
Symbol Conditions
dv/ dt
I
I
I
I
I
∫i
V
P
T
F
F,RMS
F,SM
F,RM
F,max
2
j
RRM
tot
, T
dt
stg
I
T
f =50 Hz
T
T
T
T
T
V
T
M3 and M3.5 screws
F
R
page 1
C
C
j
C
C
C
C
=5 A, T
=150 °C,
=0…480V
<140 °C
=25 °C, t
=100 °C, D =0.1
=25 °C, t
=25 °C, t
=25 °C
j
=25 °C
p
p
p
=10 ms
=10 µs
=10 ms
Product Summary
V
Q
I
Marking
D10S60C
F
DC
c
Pin 1
C
-55 ... 175
Value
350
600
100
10
15
84
39
35
50
60
PG-TO220-2-2
Pin 2
A
IDT10S60C
600
24
10
Unit
A
A
V
V/ns
W
°C
Ncm
V
nC
A
2
2006-03-14
s

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IDT10S60C Summary of contents

Page 1

... I F,RM T =100 ° =25 °C, t =10 µs F,max =25 °C, t =10 ms ∫ RRM V =0…480V dv =25 °C tot stg M3 and M3.5 screws page 1 IDT10S60C 600 PG-TO220-2-2 Pin 1 Pin Value Unit 350 600 V 50 V/ns 100 W -55 ... 175 °C 60 Ncm 2006-03-14 ...

Page 2

... V =400 V, I ≤ F,max c di /dt =200 A/µ =150 ° MHz =300 MHz R V =600 MHz di/dt. No reverse recovery time constant t j LOAD page 2 IDT10S60C Values Unit min. typ. max 1.5 K 260 °C 600 - - V - 1.5 1.7 - 1.7 2.1 - 1.4 140 µA - ...

Page 3

... C 4 Typ. forward characteristic in surge current mode I =f 120 100 °C 175°C 100 150 ° [V] F page 3 IDT10S60C ≤175 ° thJC(max) F(max 100 125 150 175 T [°C] C =400 µs; parameter -55 °C 175°C 25 °C 100 °C 150 ° [V] F ...

Page 4

... Typ. reverse current vs. reverse voltage I =f parameter 0 100 [A] 8 Typ. capacitance vs. reverse voltage C =f 600 500 400 300 200 100 [s] P page 4 IDT10S60C j 175 °C 100 °C 150 °C -55 °C 25 °C 200 300 400 500 V [V] R =25 ° MHz [V] R 600 3 10 2006-03-14 ...

Page 5

... Typ. C stored energy E =f 100 200 V Rev. 2.0 10 Typ. Capacitive charge vs. current slope Q =f(di / 300 400 500 600 100 [V] R page 5 IDT10S60C =150 °C; I ≤ F,max 400 700 di /dt [A/µs] F 1000 2006-03-14 ...

Page 6

... PG-TO220-2-2: Outline Dimensions in mm/inches Rev. 2.0 page 6 IDT10S60C 2006-03-14 ...

Page 7

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 7 IDT10S60C 2006-03-14 ...

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