2N6043 Central Semiconductor, 2N6043 Datasheet

Darlington Transistors NPN Darl SW

2N6043

Manufacturer Part Number
2N6043
Description
Darlington Transistors NPN Darl SW
Manufacturer
Central Semiconductor
Datasheet

Specifications of 2N6043

Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Package / Case
TO-220
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
60 V
Maximum Dc Collector Current
10 A
Maximum Collector Cut-off Current
20 uA
Power Dissipation
75 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
8 A
Dc Collector/base Gain Hfe Min
1000
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N6043
Manufacturer:
ON
Quantity:
10 000
Part Number:
2N6043
Manufacturer:
ON
Quantity:
10 000
Part Number:
2N6043
Manufacturer:
ST
0
Part Number:
2N6043G
Manufacturer:
ON Semiconductor
Quantity:
6
Part Number:
2N6043G
Manufacturer:
ON/安森美
Quantity:
20 000
MAXIMUM RATINGS: (T C =25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS: (T C =25°C unless otherwise noted)
SYMBOL
I CBO
I CEV
I CEV
I CEO
I EBO
BV CEO
BV CEO
BV CEO
V CE(SAT)
V CE(SAT)
V CE(SAT)
V BE(SAT)
V BE(ON)
h FE
h FE
h FE
COMPLEMENTARY SILICON POWER
2N6040 2N6041 2N6042 PNP
2N6043 2N6044 2N6045 NPN
DARLINGTON TRANSISTORS
TO-220 CASE
TEST CONDITIONS
V CB =Rated V CBO
V CE =Rated V CEO , V BE(OFF) =1.5V
V CE =Rated V CEO , V BE(OFF) =1.5V, T C =150°C
V CE =Rated V CEO
V EB =5.0V
I C =100mA (2N6040, 2N6043)
I C =100mA (2N6041, 2N6044)
I C =100mA (2N6042, 2N6045)
I C =4.0A, I B =16mA (2N6040, 2N6041, 2N6043, 2N6044)
I C =3.0A, I B =12mA (2N6042, 2N6045)
I C =8.0A, I B =80mA
I C =8.0A, I B =80mA
V CE =4.0V, I C =4.0A
V CE =4.0V, I C =4.0A (2N6040, 2N6041, 2N6043, 2N6044)
V CE =4.0V, I C =3.0A (2N6042, 2N6045)
V CE =4.0V, I C =8.0A
SYMBOL
T J , T stg
V CBO
V CEO
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6040 and
2N6043 Series types are Complementary Silicon
Power Transistors, manufactured by the epitaxial
base process, designed for general purpose amplifier
applications.
MARKING: FULL PART NUMBER
V EBO
Θ JC
I CM
P D
I C
I B
2N6040
2N6043
60
60
-65 to +150
2N6041
2N6044
1,000
1,000
1.67
MIN
120
100
100
5.0
8.0
80
80
16
75
60
80
w w w. c e n t r a l s e m i . c o m
R1 (16-November 2009)
2N6042
2N6045
20,000
20,000
MAX
100
100
200
2.0
2.0
2.0
4.0
4.5
2.8
20
20
20
UNITS
UNITS
°C/W
mA
mA
µA
µA
µA
µA
°C
W
V
V
V
A
A
V
V
V
V
V
V
V
V

Related parts for 2N6043

2N6043 Summary of contents

Page 1

... V CE(SAT =3.0A =12mA (2N6042, 2N6045) V CE(SAT =8.0A =80mA V BE(SAT =8.0A =80mA V BE(ON =4.0V =4. =4.0V =4.0A (2N6040, 2N6041, 2N6043, 2N6044 =4.0V =3.0A (2N6042, 2N6045 =4.0V =8. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6040 and 2N6043 Series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process, designed for general purpose amplifier applications ...

Page 2

... PNP 2N6043 2N6044 2N6045 NPN COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued =25°C unless otherwise noted) SYMBOL TEST CONDITIONS =4.0V =3.0A, f=1.0kHz =4.0V =3.0A, f=1.0MHz =10V =0, f=100kHz (NPN Types =10V =0, f=100kHz (PNP Types) TO-220 CASE - MECHANICAL OUTLINE ...

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