BSM100GB60DLC Infineon Technologies, BSM100GB60DLC Datasheet

no-image

BSM100GB60DLC

Manufacturer Part Number
BSM100GB60DLC
Description
IGBT Modules 600V 100A DUAL
Manufacturer
Infineon Technologies
Datasheet
1.BSM100GB60DLC.pdf (9 pages)

Specifications of BSM100GB60DLC

Configuration
Dual
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
1.95 V
Continuous Collector Current At 25 C
100 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
445 W
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
IS4 ( 34mm )
Ic (max)
100.0 A
Vce(sat) (typ)
1.95 V
Technology
IGBT2 Low Loss
Housing
34 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BSM100GB60DLC
Manufacturer:
Infinoen
Quantity:
1 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
BSM100GB60DLC
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED
Part Number:
BSM100GB60DLC
Quantity:
50
Company:
H&T Electronics H&T Electronics
Part Number:
BSM100GB60DLC
Quantity:
600
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
I
Isolations-Prüfspannung
insulation test voltage
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
prepared by: Andreas Vetter
approved by: Michael Hornkamp
IGBT-Module
IGBT-Modules
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Transistor / Transistor
Technische Information / Technical Information
2
t - value, Diode
T
T
t
T
t
V
RMS, f= 50Hz, t= 1min.
I
I
I
f= 1MHz, T
V
V
V
date of publication: 2000-04-26
revision: 1
BSM 100 GB 60 DLC
P
P
C
C
C
c
c
c
R
CE
CE
CE
= 1ms, T
= 1ms
= 100A, V
= 100A, V
= 1,5mA, V
= 70°C
= 25°C
= 25°C, Transistor
= 0V, t
= 600V, V
= 600V, V
= 0V, V
p
= 10ms, T
c
GE
vj
= 70°C
GE
GE
= 25°C, V
CE
= 20V, T
GE
GE
= 15V, T
= 15V, T
= V
= 0V, T
= 0V, T
GE
1 (8)
vj
, T
= 125°C
vj
CE
vj
vj
= 25°C
vj
vj
vj
= 25°C
= 125°C
= 25°C
= 25V, V
= 25°C
= 125°C
GE
= 0V
V
V
I
V
V
V
C,nom.
I
I
C
I
P
C
I
CRM
CE sat
GE(th)
FRM
CES
GES
GES
I
ISOL
CES
I
I
2
C
F
res
tot
ies
t
min.
4,5
-
-
-
-
-
-
-
+/- 20V
1.250
typ.
1,95
2,20
600
100
130
200
445
100
200
2,5
5,5
4,3
0,4
1
1
-
BSM 100 GB 60 DLC
max.
2,45
500
400
6,5
2000-02-08
-
-
-
-
A
mA
kV
nF
nF
µA
nA
W
V
A
A
A
V
A
A
V
V
V
2
s

Related parts for BSM100GB60DLC

Image
Part Number
Description
Manufacturer
Datasheet
Request R
BFP620
Part Number:
BFP620
Description:
Manufacturer:
Infineon Technologies AG
Datasheet:
BFP620.pdf (7 pages)
BG3123R
Part Number:
BG3123R
Description:
Manufacturer:
Infineon Technologies AG
Datasheet:
BG3123R.pdf (8 pages)
BG3130
Part Number:
BG3130
Description:
Manufacturer:
Infineon Technologies AG
Datasheet:
BG3130.pdf (6 pages)
BG3130R
Part Number:
BG3130R
Description:
Manufacturer:
Infineon Technologies AG
Datasheet:
BG3130R.pdf (6 pages)
BG3230
Part Number:
BG3230
Description:
Manufacturer:
Infineon Technologies AG
Datasheet:
BG3230.pdf (6 pages)
BGA428
Part Number:
BGA428
Description:
Manufacturer:
Infineon Technologies AG
Datasheet:
BGA428.pdf (9 pages)
BGA616
Part Number:
BGA616
Description:
Manufacturer:
Infineon Technologies AG
Datasheet:
BGA616.pdf (8 pages)
SAB-C167CR-LM
Part Number:
SAB-C167CR-LM
Description:
16-bit microcontroller with 2x2 KByte RAM
Manufacturer:
Infineon Technologies AG
Datasheet:
SAB-C167CR-LM.pdf (74 pages)
BFP182W
Part Number:
BFP182W
Description:
NPN silicon RF transistor
Manufacturer:
Infineon Technologies AG
Datasheet:
BFP182W.pdf (7 pages)
BFP193W
Part Number:
BFP193W
Description:
NPN silicon RF transistor
Manufacturer:
Infineon Technologies AG
Datasheet:
BFP193W.pdf (7 pages)
BFP450
Part Number:
BFP450
Description:
NPN silicon RF transistor
Manufacturer:
Infineon Technologies AG
Datasheet:
BFP450.pdf (10 pages)
BFP520
Part Number:
BFP520
Description:
NPN silicon RF transistor
Manufacturer:
Infineon Technologies AG
Datasheet:
BFP520.pdf (9 pages)
BGA420
Part Number:
BGA420
Description:
Si-MMIC-amplifier in SIEGET 25-technologie
Manufacturer:
Infineon Technologies AG
Datasheet:
BGA420.pdf (8 pages)
BSM20GD60DN2
Part Number:
BSM20GD60DN2
Description:
IGBT Power Module
Manufacturer:
Infineon Technologies AG
Datasheet:
BSM20GD60DN2.pdf (9 pages)
TDA4716C
Part Number:
TDA4716C
Description:
IC for switching-mode power supplies
Manufacturer:
Infineon Technologies AG
Datasheet:
TDA4716C.pdf (17 pages)

BSM100GB60DLC Summary of contents

Page 1

Technische Information / Technical Information IGBT-Module IGBT-Modules Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom ...

Page 2

Technische Information / Technical Information IGBT-Module IGBT-Modules Charakteristische Werte / Characteristic values Transistor / Transistor Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) ...

Page 3

Technische Information / Technical Information IGBT-Module IGBT-Modules Thermische Eigenschaften / Thermal properties Innerer Wärmewiderstand thermal resistance, junction to case Übergangs-Wärmewiderstand thermal resistance, case to heatsink Höchstzulässige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Mechanische Eigenschaften / Mechanical ...

Page 4

Technische Information / Technical Information IGBT-Module IGBT-Modules Ausgangskennlinie (typisch) Output characteristic (typical) 200 180 Tvj = 25°C 160 Tvj = 125°C 140 120 100 0,0 0,5 Ausgangskennlinienfeld (typisch) Output characteristic (typical) 200 180 VGE = ...

Page 5

Technische Information / Technical Information IGBT-Module IGBT-Modules Übertragungscharakteristik (typisch) Transfer characteristic (typical) 200 180 Tvj = 25°C 160 Tvj = 125°C 140 120 100 Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode ...

Page 6

Technische Information / Technical Information IGBT-Module IGBT-Modules Schaltverluste (typisch) Switching losses (typical) 6,0 Eon 5,0 Eoff Erec 4,0 3,0 2,0 1,0 0 Schaltverluste (typisch) Switching losses (typical) 3,5 3,0 2,5 2,0 1,5 1,0 0,5 0 ...

Page 7

Technische Information / Technical Information IGBT-Module IGBT-Modules Transienter Wärmewiderstand Transient thermal impedance 1 0,1 0,01 0,001 0,001 i r [K/kW] : IGBT i [sec] : IGBT i r [K/kW] : Diode i [sec] : Diode i Sicherer Arbeitsbereich (RBSOA) Reverse ...

Page 8

Technische Information / Technical Information IGBT-Module IGBT-Modules Gehäusemaße / Schaltbild Package outline / Circuit diagram 1 2 BSM 100 GB 60 DLC (8) 2,8 x ...

Page 9

Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. ...

Related keywords