BSM200GAL120DN2 Infineon Technologies, BSM200GAL120DN2 Datasheet

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BSM200GAL120DN2

Manufacturer Part Number
BSM200GAL120DN2
Description
IGBT Modules 1200V 200A GAL CH
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSM200GAL120DN2

Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.5 V
Continuous Collector Current At 25 C
290 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
1.4 KW
Maximum Operating Temperature
+ 150 C
Maximum Gate Emitter Voltage
20 V
Mounting Style
Screw
Package / Case
HB 200GAL
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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BSM 200 GAL 120 DN2
IGBT Power Module
• Single switch with chopper diode at collector
• Chopper diode like diode of BSM300GA120DN2
• Package with insulated metal base plate
Type
BSM 200 GAL 120 DN2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
T
Pulsed collector current, t
T
T
Power dissipation per IGBT
T
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Diode thermal resistance, chip-case,chopper
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
C
C
C
C
C
GE
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 20 k
p
V
1200V 290A
= 1 ms
CE
I
C
1
Package
HB 200GAL
V
V
V
I
I
P
T
T
R
R
R
V
-
-
-
-
Symbol
C
Cpuls
CE
CGR
GE
tot
j
stg
is
thJC
thJCD
THJCDC
Ordering Code
C67070-A2301-A70
40 / 125 / 56
-40 ... + 125
Values
+ 150
± 20
1200
1200
1400
2500
F
290
200
580
400
-
20
11
0.125
0.09
Aug-02-2004
Unit
V
A
W
°C
K/W
Vac
mm
sec

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BSM200GAL120DN2 Summary of contents

Page 1

BSM 200 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Chopper diode like diode of BSM300GA120DN2 • Package with insulated metal base plate Type BSM 200 GAL 120 DN2 Maximum Ratings Parameter Collector-emitter ...

Page 2

BSM 200 GAL 120 DN2 Electrical Characteristics Parameter Static Characteristics Gate threshold voltage CE, C Collector-emitter saturation voltage 200 ...

Page 3

BSM 200 GAL 120 DN2 Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 4.7 Gon Rise time V = 600 V, ...

Page 4

BSM 200 GAL 120 DN2 Electrical Characteristics Parameter Chopper Diode Chopper diode forward voltage I = 300 300 ...

Page 5

... Technische Information / Technical Information IGBT-Module BSM200GAL120DN2 IGBT-Modules Anhang C-Serie Appendix C-series Gehäuse spezifische Werte Housing specific values Modulinduktivität stray inductance module Gehäusemaße C-Serie Package outline C-series typ sCE Appendix C-series nH Appendix_C-Serie_BSM200GAL120DN2 2004-08-02 ...

Page 6

Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. ...

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