STGW35HF60W STMicroelectronics, STGW35HF60W Datasheet

IGBT Transistors Ultra Fast IGBT 35A 600V

STGW35HF60W

Manufacturer Part Number
STGW35HF60W
Description
IGBT Transistors Ultra Fast IGBT 35A 600V
Manufacturer
STMicroelectronics
Datasheet

Specifications of STGW35HF60W

Collector-emitter Saturation Voltage
2.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
60 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
200 W
Maximum Operating Temperature
+ 150 C
Package / Case
TO-247
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Features
Applications
Description
The STGW35HF60W is based on a new
advanced planar technology concept to yield an
IGBT with more stable switching performance
(E
conduction losses. The device is tailored to high
switching frequency operation (over 100 kHz).
Table 1.
1. Collector-emitter saturation voltage is classified in group A, B and C, see
May 2010
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
off
Improved E
Minimal tail current
Low conduction losses
V
Welding
High frequency converters
Power factor correction
STMicroelectronics reserves the right to ship from any group according to production availability.
) versus temperature, as well as lower
CE(sat)
STGW35HF60W
Order code
classified for easy parallel connection
Device summary
off
at elevated temperature
GW35HF60WB
GW35HF60WC
GW35HF60WA
Marking
(1)
Doc ID 17490 Rev 1
Figure 1.
Package
Table 5: VCE(sat)
TO-247
35 A, 600 V ultra fast IGBT
Internal schematic diagram
STGW35HF60W
TO-247
classification.
1
Packaging
2
Tube
Preliminary data
3
www.st.com
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STGW35HF60W Summary of contents

Page 1

... Welding ■ High frequency converters ■ Power factor correction Description The STGW35HF60W is based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (E ) versus temperature, as well as lower off conduction losses. The device is tailored to high switching frequency operation (over 100 kHz). ...

Page 2

... Thermal resistance junction-ambient thj-amb 2/12 Parameter = ° 100 ° ° max ( ) = ------------------------------------------------------------------------------------------------------- × max – thj c CE sat = 10 Ω 150 °C CES Parameter Doc ID 17490 Rev 1 STGW35HF60W Value 600 60 35 150 80 ± 20 200 – 150 – max C C Value 0.63 50 Unit °C Unit ° ...

Page 3

... STGW35HF60W 2 Electrical characteristics ( °C unless otherwise specified) J Table 4. Static Symbol Collector-emitter breakdown voltage V (BR)CES (V GE Collector-emitter V CE(sat) saturation voltage V Gate threshold voltage GE(th) Collector cut-off current I CES (V GE Gate-emitter leakage I GES current (V Table 5. V CE(sat) Symbol Collector-emitter saturation voltage V CE(sat Table 6. ...

Page 4

... 400 Ω (see Figure V = 400 Ω 125 °C J (see Figure Parameter Test conditions V = 400 Ω (see Figure V = 400 Ω 125 °C (see T J Doc ID 17490 Rev 1 STGW35HF60W Min. Typ 15) 1650 = Figure 15) 1600 = 175 225 70 15) Min. Typ. ...

Page 5

... STGW35HF60W 2.1 Electrical characteristics (curves) Figure 2. Output characteristics 200 I ( 150 100 Figure 4. Normalized V CE(sat) 1.6 V CE(sat) (norm) 1 -50 º ºC J 1.2 1 0 Figure 6. Normalized breakdown voltage vs. temperature 1.1 V CES (norm) 1. 0.95 0.9 - Figure 3. 200 I ( 150 9 V 100 ( vs. I Figure 5. C 1.6 ...

Page 6

... Figure 11. Switching losses vs. gate E (µJ) 2000 1500 E OFF 1000 = 15 V 500 GE =10 Ω G 100 T 125 (°C) J Figure 13. Turn-off SOA 1000 OFF = 125 ° (A) C Doc ID 17490 Rev 1 STGW35HF60W Capacitance variations MHz oes C res resistance E OFF V = 400 125 ° 120 180 (A) 100 ...

Page 7

... STGW35HF60W Figure 14. Thermal impedance Doc ID 17490 Rev 1 Electrical characteristics 7/12 ...

Page 8

... Test circuits 3 Test circuits Figure 15. Test circuit for inductive load switching Figure 17. Switching waveform Td(off) Td(on) Tr(Ion) Ton 8/12 Figure 16. Gate charge test circuit AM01504v1 90% 10% 90% 10% Tr(Voff) Tcross 90% 10% Tf Toff AM01506v1 Doc ID 17490 Rev 1 STGW35HF60W AM01505v1 ...

Page 9

... STGW35HF60W 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Doc ID 17490 Rev 1 Package mechanical data ® 9/12 ...

Page 10

... L1 L2 øP øR S 10/12 TO-247 Mechanical data mm. Min. Typ 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 Doc ID 17490 Rev 1 STGW35HF60W Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 14.80 4.30 3.65 5.50 ...

Page 11

... STGW35HF60W 5 Revision history Table 9. Document revision history Date 17-May-2010 Revision 1 Initial release Doc ID 17490 Rev 1 Revision history Changes 11/12 ...

Page 12

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 17490 Rev 1 STGW35HF60W ...

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