FZT1151ATA Diodes Inc, FZT1151ATA Datasheet

Bipolar Power PNP High Gain & Crnt

FZT1151ATA

Manufacturer Part Number
FZT1151ATA
Description
Bipolar Power PNP High Gain & Crnt
Manufacturer
Diodes Inc
Datasheet
1.FZT1151ATA.pdf (4 pages)

Specifications of FZT1151ATA

Continuous Collector Current
- 3 A
Maximum Operating Frequency
145 MHz
Minimum Operating Temperature
- 55 C
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Package / Case
SOT-223
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
- 5 V
Maximum Dc Collector Current
3 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Collector Emitter Voltage V(br)ceo
40V
Power Dissipation Pd
2.5W
Dc Collector Current
3A
Dc Current Gain Hfe
450
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
FZT1151ATA
Manufacturer:
DIODES/美台
Quantity:
20 000
PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 1 - JANUARY 1997
FEATURES
*
*
*
*
*
ABSOLUTE MAXIMUM RATINGS.
† The power which can be dissipated assuming the device is mounted in a typical manner on
a P.C.B. with copper equal to 2 inches x 2 inches
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
Operating and Storage Temperature
Range
V
3 Amp Continuous Current
5 Amp Pulse Current
Low saturation Voltage
High Gain
CEO
= -40V
amb
=25°C †
SYMBOL
V
V
V
I
I
I
P
T
CM
C
B
tot
j
CBO
CEO
EBO
:T
stg
-55 to +150
VALUE
-500
-45
-40
2.5
-5
-5
-3
FZT1151A
C C
SOT223
UNIT
B
mA
°C
W
V
V
V
A
A
C
E

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FZT1151ATA Summary of contents

Page 1

PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 1 - JANUARY 1997 FEATURES * V = -40V CEO * 3 Amp Continuous Current * 5 Amp Pulse Current * Low saturation Voltage * High Gain ABSOLUTE MAXIMUM RATINGS. PARAMETER ...

Page 2

FZT1151A ELECTRICAL CHARACTERISTICS (at T PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current I Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On ...

Page 3

TYPICAL CHARACTERISTICS 1.0 +25°C 0.8 0.6 IC/IB=10 IC/IB=50 IC/IB=100 IC/IB=200 0.4 0 10m 100m I - Collector Current ( CE(sat) C 750 500 250 +100°C +25°C -55° 100m 10m I - Collector ...

Page 4

FZT1151A D= 100µs 1ms 10ms 100ms Pulse Width Transient Thermal Resistance SPICE PARAMETERS *ZETEX FZT1151A Spice model Last revision 12/12/96 * .MODEL FZT1151A PNP IS =1.7e-12 NF =1.004 ...

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