MOSFET Power 600V, N-Channel MOSFET, UniFET-II

FDPF5N60NZ

Manufacturer Part NumberFDPF5N60NZ
DescriptionMOSFET Power 600V, N-Channel MOSFET, UniFET-II
ManufacturerFairchild Semiconductor
FDPF5N60NZ datasheet
 


Specifications of FDPF5N60NZ

Gate Charge Qg10 nCConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)1.65 Ohms
Forward Transconductance Gfs (max / Min)5 SDrain-source Breakdown Voltage600 V
Continuous Drain Current2.7 A, 4.5 APower Dissipation33 W
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Package / CaseTO-220FLead Free Status / RoHS StatusLead free / RoHS Compliant
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FDP5N60NZ / FDPF5N60NZ
N-Channel MOSFET
600V, 4.5A, 2.0
Features
• R
= 1.65 ( Typ.)@ V
= 10V, I
DS(on)
GS
• Low Gate Charge ( Typ. 10nC)
• Low C
( Typ. 5pF)
rss
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS compliant
TO-220
G D S
FDP Series
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DSS
V
Gate to Source Voltage
GSS
I
Drain Current
D
I
Drain Current
DM
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
, T
Operating and Storage Temperature Range
J
STG
Maximum Lead Temperature for Soldering Purpose,
T
L
1/8” from Case for 5 Seconds
*Dran current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction to Case
JC
R
Thermal Resistance, Case to Sink Typ
CS
R
Thermal Resistance, Junction to Ambient
JA
©2010 Fairchild Semiconductor Corporation
FDP5N60NZ / FDPF5N60NZ Rev. A
Description
= 2.25A
These N-Channel enhancement mode power field effect
D
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
TO-220F
G
S
D
FDPF Series
(potting)
o
T
= 25
C unless otherwise noted
*
C
Parameter
o
- Continuous (T
= 25
C)
C
o
- Continuous (T
= 100
C)
C
- Pulsed
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
o
(T
= 25
C)
C
o
- Derate above 25
C
Parameter
1
November 2010
UniFET-II
D
D
G
G
S
S
FDP5N60NZ
FDPF5N60NZ
Units
600
V
±25
V
4.5
4.5*
A
2.7
2.7*
18
18*
A
175
mJ
4.5
A
10
mJ
10
V/ns
100
33
W
o
0.8
0.27
W/
C
o
-55 to +150
C
o
300
C
Units
FDP5N60NZ
FDPF5N60NZ
1.25
3.75
o
0.5
-
C/W
62.5
62.5
www.fairchildsemi.com
TM

FDPF5N60NZ Summary of contents

  • Page 1

    ... R Thermal Resistance, Case to Sink Typ CS R Thermal Resistance, Junction to Ambient JA ©2010 Fairchild Semiconductor Corporation FDP5N60NZ / FDPF5N60NZ Rev. A Description = 2.25A These N-Channel enhancement mode power field effect D transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

  • Page 2

    ... G 4.5A, di/dt  200A/s, V  Starting DSS 4. Pulse test: Pulse width s,Duty Cycle  5. Essentially Independent of Operating Temperature Typical Characteristics FDP5N60NZ / FDPF5N60NZ Rev. A Package Reel Size TO-220 - TO-220F - unless otherwise noted ...

  • Page 3

    ... Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Drain Current [A] D Figure 5. Capacitance Characteristics 1000 100 iss = shorted C oss = rss = Drain-Source Voltage [V] DS FDP5N60NZ / FDPF5N60NZ Rev. A Figure 2. Transfer Characteristics *Notes:  1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage V = 10V 20V GS o *Note Figure 6 ...

  • Page 4

    ... Figure 9. Maximum Safe Operating Area -FDPF5N60NZ Operation in This Area is Limited by R 0.1 *Notes Single Pulse 0.01 0 Drain-Source Voltage [ 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single pulse 0. FDP5N60NZ / FDPF5N60NZ Rev. A (Continued) Figure 8. On-Resistance Variation *Notes  250 120 160   100 s 1ms 10ms DS(on ...

  • Page 5

    ... FDP5N60NZ / FDPF5N60NZ Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

  • Page 6

    ... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDP5N60NZ / FDPF5N60NZ Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT GS GS • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

  • Page 7

    Mechanical Dimensions FDP10N60NZ / FDPF10N60NZ Rev. A TO-220 7 www.fairchildsemi.com ...

  • Page 8

    Package Dimensions * Front/Back Side Isolation Voltage : AC 2500V FDP10N60NZ / FDPF10N60NZ Rev. A TO-220F 8 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 9

    ... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP5N60NZ / FDPF5N60NZ Rev. A F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...