FDD86102 Fairchild Semiconductor, FDD86102 Datasheet

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... R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDD86102 FDD86102 ©2009 Fairchild Semiconductor Corporation FDD86102 Rev.C2 ® MOSFET General Description = This N-Channel D Semiconductor‘s advanced Power Trench DS(on) been optimized for r ruggedness ...

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... R is guaranteed by design while R is determined by the user’s board design. θJC θJA 2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. ° 3. Starting mH FDD86102 Rev. °C unless otherwise noted J Test Conditions = 250 µ 250 µA, referenced to 25 ° ± ...

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... JUNCTION TEMPERATURE ( T J Figure 3. Normalized On- Resistance vs Junction Temperature 40 PULSE DURATION = 80 µ s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDD86102 Rev. °C unless otherwise noted J PULSE DURATION = 80 µ s DUTY CYCLE = 0.5% MAX 4 100 125 150 - 0.001 4.5 V ...

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... TIME IN AVALANCHE (ms) AV Figure 9. Unclamped Inductive Switching Capability 50 10 THIS AREA IS LIMITED DS(on) SINGLE PULSE T = MAX RATED 3.8 C/W θ DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area FDD86102 Rev. °C unless otherwise noted J 1000 = 100 10000 100 us 1000 100 ...

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... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.1 0.01 SINGLE PULSE R θ 0. Figure 13. Junction-to-Case Transient Thermal Response Curve FDD86102 Rev. °C unless otherwise noted C NOTES: DUTY FACTOR PEAK θJC θ www.fairchildsemi.com 1 ...

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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDD86102 Rev.C2 ® FlashWriter * Power-SPM™ FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ ...