IPD060N03L G Infineon Technologies, IPD060N03L G Datasheet

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IPD060N03L G

Manufacturer Part Number
IPD060N03L G
Description
MOSFET Power N-CH 30V 50A
Manufacturer
Infineon Technologies
Datasheet

Specifications of IPD060N03L G

Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.006 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Power Dissipation
56000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-252
Drain Source Voltage Vds
30V
On Resistance Rds(on)
5mohm
Rds(on) Test Voltage Vgs
10V
Operating Temperature Range
-55°C To +175°C
Transistor Case Style
TO-252
Rohs Compliant
Yes
Fall Time
3 ns
Rise Time
3 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPD060N03LGXT
Rev. 1.03
1)
Type
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC
• N-channel, logic level
• Excellent gate charge x R
• Very low on-resistance R
• Avalanche rated
• Pb-free plating; RoHS compliant
• Avalanche rated
• Pb-free plating; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche current, single pulse
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
OptiMOS
Type
Package
Marking
J-STD20 and JESD22
®
3 Power-Transistor
IPD060N03L G
PG-TO252-3
060N03L
2)
j
=25 °C, unless otherwise specified
DS(on)
DS(on)
1)
3)
product (FOM)
for target applications
Symbol Conditions
I
I
I
E
dv /dt
V
D
D,pulse
AS
AS
GS
IPF060N03L G
PG-TO252-3-23
060N03L
V
V
V
V
T
T
T
I
I
di /dt =200 A/µs,
T
D
D
page 1
C
C
C
j,max
GS
GS
GS
GS
=20 A, R
=50 A, V
=100 °C
=25 °C
=25 °C
=10 V, T
=10 V, T
=4.5 V, T
=4.5 V,
=175 °C
DS
GS
C
C
=24 V,
=25 Ω
Product Summary
V
R
I
C
=25 °C
=100 °C
=25 °C
D
DS
IPS060N03L G
PG-TO251-3-11
060N03L
DS(on),max
IPS060N03L G
IPD060N03L G
Value
350
±20
50
50
50
43
50
60
6
IPU060N03L G
PG-TO251-3
060N03L
IPU060N03L G
IPF060N03L G
30
50
6
Unit
A
mJ
kV/µs
V
V
mΩ
A
2008-04-15

Related parts for IPD060N03L G

IPD060N03L G Summary of contents

Page 1

... IPS060N03L G PG-TO252-3-23 PG-TO251-3-11 060N03L 060N03L Symbol Conditions =25 ° = =100 ° =4 =25 ° =4 =100 ° =25 °C D,pulse =25 ° =25 Ω = = = /dt di /dt =200 A/µs, T =175 °C j,max V GS page 1 IPD060N03L G IPF060N03L G IPS060N03L G IPU060N03L mΩ IPU060N03L G PG-TO251-3 060N03L Value Unit 350 kV/µs ±20 V 2008-04-15 ...

Page 2

... =250 µA GS(th = DSS T =25 ° = =125 ° = GSS =4 =30 A DS( |>2 DS(on)max = page 2 IPD060N03L G IPF060N03L G IPS060N03L G IPU060N03L G Value Unit 56 W -55 ... 175 °C 55/175/56 Values Unit min. typ. max 2.7 K 2.2 - 0.1 1 µ 100 - 10 100 nA - 7.2 9 mΩ Ω 2008-04-15 ...

Page 3

... Symbol Conditions C iss = oss f =1 MHz C rss t d( =1.6 Ω d(off g( plateau g(sync 4 = oss =25 ° S,pulse = =25 ° = /dt =400 A/µs F page 3 IPD060N03L G IPF060N03L G IPS060N03L G IPU060N03L G Values Unit min. typ. max. - 1800 2400 pF - 720 960 - 350 - 0.87 1 2008-04-15 ...

Page 4

... Rev. 1.03 2 Drain current I =f 100 150 200 0 [° Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µs 1 100 µ 0.1 0. [V] DS page 4 IPD060N03L G IPF060N03L G IPS060N03L G IPU060N03L G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse [s] p 200 1 0 ...

Page 5

... Typ. transfer characteristics I =f |>2 DS(on)max parameter 100 175 ° Rev. 1.03 6 Typ. drain-source on resistance R =f(I DS(on) parameter 3 Typ. forward transconductance g =f 100 ° [V] GS page 5 IPD060N03L G IPF060N03L G IPS060N03L G IPU060N03L =25 ° 3 [A] D =25 ° [ 100 100 2008-04-15 ...

Page 6

... Forward characteristics of reverse diode I =f parameter: T 1000 Ciss 100 Coss 10 Crss 0.0 [V] DS page 6 IPD060N03L G IPF060N03L G IPS060N03L G IPU060N03L =250 µ - 100 140 T [° 175 °C, 98% 25 °C 175 °C 25 °C, 98% 0.5 1.0 1.5 V [V] SD 180 2.0 ...

Page 7

... T j(start) 100 150 ° Drain-source breakdown voltage V =f BR(DSS -60 - Rev. 1.03 14 Typ. gate charge V =f(Q GS gate parameter °C 8 100 ° [µs] 16 Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPD060N03L G IPF060N03L G IPS060N03L G IPU060N03L =30 A pulsed [nC] gate ate 2008-04-15 ...

Page 8

... Package Outline Rev. 1.03 IPD060N03L G IPS060N03L G PG-TO252-3 page 8 IPF060N03L G IPU060N03L G 2008-04-15 ...

Page 9

... Package Outline PG-TO251-3-11: Outline PG-TO251-3-21: Outline Rev. 1.03 IPD060N03L G IPS060N03L G PG-TO252-3-23 page 9 IPF060N03L G IPU060N03L G 2008-04-15 ...

Page 10

... Package Outline PG-TO251-3-11: Outline PG-TO251-3-21: Outline Rev. 1.03 IPD060N03L G IPS060N03L G PG-TO251-3-11 page 10 IPF060N03L G IPU060N03L G 2008-04-15 ...

Page 11

... Package Outline PG-TO251-3-11: Outline PG-TO251-3-21: Outline Rev. 1.03 IPD060N03L G IPS060N03L G PG-TO251-3 page 11 IPF060N03L G IPU060N03L G 2008-04-15 ...

Page 12

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.03 IPD060N03L G IPS060N03L G page 12 IPF060N03L G IPU060N03L G ...

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