... V (V) r (Ω) (BR)DSS DS(on) 0.021 150 GS T O-220AB Ordering Information: SUP85N15-21 SUP85N15-21-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current b Single Pulse Avalanche Energy b Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
... SUP85N15-21 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
... SUP85N15-21 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 2.4 D 2.0 1.6 1.2 0.8 0.4 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 1000 100 ( 150 ° 0.1 0.00001 0.0001 0.001 t (Sec) in Avalanche Current vs. Time www.vishay.com 4 100 125 150 175 ( °C A 0.01 0.1 ...
... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72003. Document Number: 72003 S-71662-Rev. B, 06-Aug-07 1000 100 125 150 175 - Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case SUP85N15-21 Vishay Siliconix Limited on) 100 °C C Single Pulse 0.1 0 ...
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