SUP85N15-21-E3 Vishay, SUP85N15-21-E3 Datasheet

MOSFET Power 150V 85A 300W 21mohm @ 10V

SUP85N15-21-E3

Manufacturer Part Number
SUP85N15-21-E3
Description
MOSFET Power 150V 85A 300W 21mohm @ 10V
Manufacturer
Vishay
Datasheet

Specifications of SUP85N15-21-E3

Transistor Polarity
N-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.021 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
25 S
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
85 A
Power Dissipation
2400 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Continuous Drain Current Id
85A
Drain Source Voltage Vds
150V
On Resistance Rds(on)
21mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2V
Power Dissipation Pd
2.4W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUP85N15-21-E3
Manufacturer:
FSC
Quantity:
2 000
Part Number:
SUP85N15-21-E3
Manufacturer:
VISHAY
Quantity:
200
Part Number:
SUP85N15-21-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SUP85N15-21-E3
Quantity:
70 000
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve for voltage derating.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72003
S-71662-Rev. B, 06-Aug-07
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient-Free Air
Junction-to-Case (Drain)
V
(BR)DSS
150
(V)
Ordering Information: SUP85N15-21
0.021 at V
T O-220AB
T op V i e w
N-Channel 150-V (D-S) 175 °C MOSFET
G D S
r
J
b
DS(on)
= 175 °C)
b
SUP85N15-21-E3 (Lead (Pb)-free)
GS
(Ω)
= 10 V
DRAIN connected to T A B
C
I
= 25 °C, unless otherwise noted
D
85
(A)
T
T
L = 0.1 mH
T
T
C
A
C
C
= 125 °C
= 25 °C
= 25 °C
= 25 °C
FEATURES
APPLICATIONS
• TrenchFET
• 175 °C Junction Temperature
• Primary Side Switch
d
G
N-Channel MOSFET
Symbol
Symbol
T
R
R
J
V
V
E
I
I
P
, T
DM
I
AS
thJA
thJC
GS
DS
AS
D
D
®
stg
D
S
Power MOSFET
- 55 to 175
Limit
Limit
300
± 20
62.5
150
180
125
0.4
2.4
85
50
50
SUP85N15-21
c
Vishay Siliconix
www.vishay.com
°C/W
Unit
Unit
RoHS*
COMPLIANT
mJ
°C
W
V
A
Available
1

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SUP85N15-21-E3 Summary of contents

Page 1

... V (V) r (Ω) (BR)DSS DS(on) 0.021 150 GS T O-220AB Ordering Information: SUP85N15-21 SUP85N15-21-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current b Single Pulse Avalanche Energy b Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... SUP85N15-21 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... C rss 1000 Drain-to-Source V oltage (V) DS Capacitance Document Number: 72003 S-71662-Rev. B, 06-Aug- thru ° °C 125 °C 80 100 120 100 125 150 SUP85N15-21 Vishay Siliconix 180 150 120 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 0.04 0. 0.02 0.01 0. Drain Current (A) D On-Resistance vs ...

Page 4

... SUP85N15-21 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 2.4 D 2.0 1.6 1.2 0.8 0.4 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 1000 100 ( 150 ° 0.1 0.00001 0.0001 0.001 t (Sec) in Avalanche Current vs. Time www.vishay.com 4 100 125 150 175 ( °C A 0.01 0.1 ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72003. Document Number: 72003 S-71662-Rev. B, 06-Aug-07 1000 100 125 150 175 - Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case SUP85N15-21 Vishay Siliconix Limited on) 100 °C C Single Pulse 0.1 0 ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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