IPD040N03L G

Manufacturer Part NumberIPD040N03L G
DescriptionMOSFET Power N-CH 30V 100A
ManufacturerInfineon Technologies
IPD040N03L G datasheet
 


Specifications of IPD040N03L G

Minimum Operating Temperature- 55 CConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.004 Ohm @ 10 V
Drain-source Breakdown Voltage30 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current90 APower Dissipation79000 mW
Maximum Operating Temperature+ 175 CMounting StyleSMD/SMT
Package / CaseTO-252Drain Source Voltage Vds30V
On Resistance Rds(on)3.3mohmRds(on) Test Voltage Vgs10V
Operating Temperature Range-55°C To +175°CTransistor Case StyleTO-252
Rohs CompliantYesLead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesIPD040N03LGXT  
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Type
OptiMOS
®
3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC
• N-channel, logic level
• Excellent gate charge x R
DS(on)
• Very low on-resistance R
DS(on)
• Avalanche rated
• Pb-free plating; RoHS compliant
Type
IPD040N03L G
PG-TO252-3-11
Package
Marking
040N03L
Maximum ratings, at T
=25 °C, unless otherwise specified
j
Parameter
Continuous drain current
2)
Pulsed drain current
Avalanche current, single pulse
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
1)
J-STD20 and JESD22
Rev. 1.02
Product Summary
V
DS
R
DS(on),max
I
D
1)
for target applications
product (FOM)
IPS040N03L G
PG-TO251-3-11
040N03L
Symbol Conditions
I
V
=10 V, T
=25 °C
D
GS
C
V
=10 V, T
=100 °C
GS
C
V
=4.5 V, T
=25 °C
GS
C
V
=4.5 V,
GS
T
=100 °C
C
I
T
=25 °C
D,pulse
C
3)
I
T
=25 °C
AS
C
=25 Ω
E
I
=50 A, R
AS
D
GS
I
=90 A, V
=24 V,
D
DS
dv /dt
di /dt =200 A/µs,
T
=175 °C
j,max
V
GS
page 1
IPD040N03L G
IPS040N03L G
30
V
4
mΩ
90
A
Value
Unit
90
A
76
89
63
400
90
60
mJ
6
kV/µs
±20
V
2008-04-15

IPD040N03L G Summary of contents

  • Page 1

    ... DS(on),max for target applications product (FOM) IPS040N03L G PG-TO251-3-11 040N03L Symbol Conditions =25 ° = =100 ° =4 =25 ° =4 =100 ° =25 °C D,pulse =25 ° =25 Ω = = = /dt di /dt =200 A/µs, T =175 °C j,max V GS page 1 IPD040N03L G IPS040N03L mΩ Value Unit 400 kV/µs ±20 V 2008-04-15 ...

  • Page 2

    ... =250 µA GS(th = DSS T =25 ° = =125 ° = GSS =4 =30 A DS( |>2 DS(on)max = page 2 IPD040N03L G IPS040N03L G Value Unit 79 W -55 ... 175 °C 55/175/56 Values Unit min. typ. max 1.9 K 2.2 - 0.1 1 µ 100 - 10 100 nA - 4.7 5.9 mΩ - 3.3 4 Ω 2008-04-15 ...

  • Page 3

    ... Rev. 1.02 Symbol Conditions C iss = oss f =1 MHz C rss t d( =1.6 Ω d(off g( plateau g(sync 4 = oss =25 ° S,pulse = =25 ° = /dt =400 A/µs F page 3 IPD040N03L G IPS040N03L G Values Unit min. typ. max. - 2900 3900 pF - 1100 1500 - 400 - 0.83 1 2008-04-15 ...

  • Page 4

    ... Rev. 1.02 2 Drain current I =f 100 100 150 200 0 [° Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µs 100 µ 0.1 0. [V] DS page 4 IPD040N03L G IPS040N03L G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse [s] p 200 2008-04-15 ...

  • Page 5

    ... Typ. transfer characteristics I =f |>2 DS(on)max parameter 160 120 80 40 175 ° Rev. 1.02 6 Typ. drain-source on resistance R =f(I DS(on) parameter Typ. forward transconductance g =f 160 120 ° [V] GS page 5 IPD040N03L G IPS040N03L =25 ° 3 [A] D =25 ° [A] D 100 100 2008-04-15 ...

  • Page 6

    ... Forward characteristics of reverse diode I =f parameter Ciss 2 10 Coss 1 10 Crss [V] DS page 6 IPD040N03L G IPS040N03L =250 µ - 100 140 T [° °C, 98% 25 °C 175 °C 175 °C, 98% z 0.5 1 1.5 V [V] SD 180 2 2008-04-15 ...

  • Page 7

    ... I =f parameter: T j(start) 100 150 ° Drain-source breakdown voltage V =f BR(DSS -60 - Rev. 1.02 14 Typ. gate charge V =f(Q GS gate parameter °C 100 ° [µs] 16 Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPD040N03L G IPS040N03L =30 A pulsed [nC] gate ate 2008-04-15 ...

  • Page 8

    ... Package Outline Rev. 1.02 PG-TO252-3-11 page 8 IPD040N03L G IPS040N03L G 2008-04-15 ...

  • Page 9

    ... Package Outline Rev. 1.02 PG-TO251-3-11 page 9 IPD040N03L G IPS040N03L G 2008-04-15 ...

  • Page 10

    ... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.02 page 10 IPD040N03L G IPS040N03L G 2008-04-15 ...