IPD040N03L G Infineon Technologies, IPD040N03L G Datasheet - Page 6

• Manufacturer Part Number: IPD040N03L G
• Description: MOSFET Power N-CH 30V 100A
• Manufacturer: Infineon Technologies

Specifications of IPD040N03L G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.004 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 90 A
• Power Dissipation: 79000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 3.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: TO-252
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD040N03LGXT

Rev. 1.02
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
4
DS
=f(T
8
6
4
2
0
3
2
1
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz
-20
=30 A; V
98 %
20
10
GS
V
=10 V
T
DS
j
60
[°C]
typ
Coss
Ciss
[V]
Crss
100
20
140
180
page 6
30
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
2.5
1.5
0.5
10
10
10
10
=f(T
SD
2
1
0
3
2
1
0
-60
)
0
j
); V
j
GS
-20
=V
0.5
175 °C
DS
20
; I
D
z
=250 µA
V
T
SD
j
60
[°C]
1
[V]
25 °C
175 °C, 98%
100
IPD040N03L G
IPS040N03L G
1.5
140
25 °C, 98%
2008-04-15
180
2