IPD040N03L G Infineon Technologies, IPD040N03L G Datasheet - Page 9

• Manufacturer Part Number: IPD040N03L G
• Description: MOSFET Power N-CH 30V 100A
• Manufacturer: Infineon Technologies

Specifications of IPD040N03L G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.004 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 90 A
• Power Dissipation: 79000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 3.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: TO-252
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD040N03LGXT

IPD040N03L G
IPS040N03L G
Package Outline
PG-TO251-3-11
Rev. 1.02
page 9
2008-04-15