BSZ088N03MS G Infineon Technologies

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BSZ088N03MS G

Manufacturer Part Number

BSZ088N03MS G

Description

MOSFET Power OptiMOS 3 M-SERIES

Manufacturer

Infineon Technologies

Specifications of BSZ088N03MS G

Minimum Operating Temperature

- 55 C

Configuration

Single Quad Drain Triple Source

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.0088 Ohm @ 10 V

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

11 A

Power Dissipation

2100 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

TSDSON

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

BSZ088N03MSGXT

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