SI4559EY-T1-E3 Vishay, SI4559EY-T1-E3 Datasheet

MOSFET Power 60V 4.5/3.1A

SI4559EY-T1-E3

Manufacturer Part Number
SI4559EY-T1-E3
Description
MOSFET Power 60V 4.5/3.1A
Manufacturer
Vishay
Datasheet

Specifications of SI4559EY-T1-E3

Transistor Polarity
N and P-Channel
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.055 Ohm @ 10 V @ N Channel
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.5 A @ N Channel or 3.1 A @ P Channel
Power Dissipation
2400 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Continuous Drain Current Id
4.5A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
55mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4559EY-T1-E3
Manufacturer:
PTC
Quantity:
4 500
Part Number:
SI4559EY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
Document Number: 70167
S09-1389-Rev. E, 20-Jul-09
Ordering Information: Si4559EY-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
N-Channel
P-Channel
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
G
G
S
S
1
1
2
2
V
DS
- 60
1
2
3
4
60
Si4559EY-T1-GE3 (Lead (Pb)-free and Halogen-free)
(V)
N- and P-Channel 60-V (D-S), 175 °C MOSFET
Top View
SO-8
J
a
0.150 at V
0.120 at V
0.075 at V
0.055 at V
= 175 °C)
a
R
DS(on)
8
7
6
5
GS
GS
GS
a
GS
D
D
D
D
(Ω)
= - 4.5 V
= - 10 V
= 4.5 V
= 10 V
1
1
2
2
a
T
T
T
T
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
A
= 25 °C, unless otherwise noted
I
± 4.5
± 3.9
± 3.1
± 2.8
D
(A)
Symbol
Symbol
T
R
J
V
V
I
P
, T
DM
I
I
thJA
DS
GS
D
S
D
stg
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 175 °C Maximum Junction Temperature
• Compliant to RoHS Directive 2002/95/EC
G
1
Definition
N-Channel MOSFET
N-Channel
D
S
± 4.5
± 3.8
± 20
± 30
2.0
60
1
1
®
N- or P-Channel
Power MOSFETs
- 55 to 175
62.5
2.4
1.7
G
2
P-Channel
P-Channel MOSFET
± 3.1
± 2.6
± 20
± 30
- 2.0
- 60
Vishay Siliconix
D
S
2
2
Si4559EY
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI4559EY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4559EY-T1-E3 (Lead (Pb)-free) Si4559EY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4559EY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage a Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... Drain Current ( On-Resistance vs. Drain Current 4 Total Gate Charge (nC) g Gate Charge Document Number: 70167 S09-1389-Rev. E, 20-Jul- Si4559EY Vishay Siliconix ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 1400 1200 C iss 1000 800 600 C oss 400 200 C rss Drain-to-Source Voltage (V) DS Capacitance 2 ...

Page 4

... Si4559EY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 175 ° 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.2 0 0.2 - 0.4 - 0.6 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...

Page 5

... Drain Current ( On-Resistance vs. Drain Current 3 Total Gate Charge (nC) g Gate Charge Document Number: 70167 S09-1389-Rev. E, 20-Jul- Si4559EY Vishay Siliconix ° 150 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 1400 1200 C 1000 800 600 400 C oss 200 C rss Drain-to-Source Voltage (V) DS Capacitance 2 ...

Page 6

... Si4559EY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 175 ° 0.00 0.25 0.50 0. Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.75 0.50 0.25 = 250 μ 0. Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0 ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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