SUP75P05-08-E3 Vishay, SUP75P05-08-E3 Datasheet
SUP75P05-08-E3
Specifications of SUP75P05-08-E3
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SUP75P05-08-E3 Summary of contents
Page 1
... P-Channel 55-V (D-S), 175 C MOSFET V ( (BR)DSS DS(on) –55 0.008 TO-220AB DRAIN connected to TAB Top View SUP75P05-08 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current ( 175 C) 175 C) J Pulsed Drain Current Avalanche Current b Repetitive Avalanche Energy T Power Dissipation Power Dissipation Operating Junction and Storage Temperature Range ...
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... Forward Voltage Reverse Recovery Time Peak Reverse Recovery Current I RM(REC) Reverse Recovery Charge Notes: a. Pulse test; pulse width 300 s, duty cycle b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com FaxBack 408-970-5600 2-2 New Product Test Condition –250 –250 A DS ...
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... SUP/SUB75P05-08 Vishay Siliconix Transfer Characteristics T = – 125 – Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current 100 120 I – Drain Current (A) D Gate Charge 100 150 200 250 300 Q – Total Gate Charge (nC) g www.vishay.com FaxBack 408-970-5600 2-3 ...
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... T – Junction Temperature ( C) J Avalanche Current vs. Time 1000 I ( 100 ( 150 0.1 0.00001 0.0001 0.001 0.01 t (Sec) in www.vishay.com FaxBack 408-970-5600 2-4 New Product 100 10 1 125 150 175 –50 0.1 1 Source-Drain Diode Forward Voltage T = 150 – Source-to-Drain Voltage (V) SD Drain Source Breakdown vs ...
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... S-99404—Rev. B, 29-Nov-99 New Product 500 Limited by r DS(on) 100 10 1 150 175 0.1 –3 – Square Wave Pulse Duration (sec) SUP/SUB75P05-08 Vishay Siliconix Safe Operating Area 10 s 100 100 ms Single Pulse 100 V – Drain-to-Source Voltage (V) DS – www.vishay.com FaxBack 408-970-5600 2-5 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...