SUD50P04-15-E3 Vishay, SUD50P04-15-E3 Datasheet

MOSFET Power 40V 50A 100W

SUD50P04-15-E3

Manufacturer Part Number
SUD50P04-15-E3
Description
MOSFET Power 40V 50A 100W
Manufacturer
Vishay
Datasheet

Specifications of SUD50P04-15-E3

Transistor Polarity
P-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.015 Ohm @ 10 V
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Power Dissipation
3000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-252
Continuous Drain Current Id
-50A
Drain Source Voltage Vds
-40V
On Resistance Rds(on)
23mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUD50P04-15-E3
Manufacturer:
VISHAY
Quantity:
112
Part Number:
SUD50P04-15-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SUD50P04-15-E3
Manufacturer:
VISHAY
Quantity:
743
Notes
a.
b.
Document Number: 71176
S-00830—Rev. A, 24-Apr-00
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
V
Surface Mounted on 1” x 1” FR4 Board.
See SOA curve for voltage derating.
DS
–40
–40
(V)
Order Number:
SUD50P04-15
G
Top View
TO-252
b
b
D
0.023 @ V
b
b
0.015 @ V
a
a
S
r
DS(on)
P-Channel 40-V (D-S), 175 C MOSFET
Parameter
Parameter
GS
GS
( )
= –4.5 V
Drain Connected to Tab
= –10 V
New Product
I
D
–50
–45
Steady State
T
t
(A)
T
T
T
C
C
C
A
= 100 C
= 25 C
= 25 C
= 25 C
10 sec.
G
P-Channel MOSFET
Symbol
Symbol
T
R
R
R
J
V
V
I
P
P
DM
, T
I
I
thJA
thJA
thJC
I
DS
GS
D
D
S
D
D
stg
S
D
Typical
1.2
15
40
–55 to 175
www.vishay.com FaxBack 408-970-5600
Limit
–150
100
–40
–50
–40
–50
3
20
a
b
Vishay Siliconix
SUD50P04-15
Maximum
1.5
18
50
Unit
Unit
C/W
C/W
W
W
V
V
A
A
A
C
1

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SUD50P04-15-E3 Summary of contents

Page 1

... D –50 – P-Channel MOSFET Symbol 100 –55 to 175 J stg Symbol Typical t 10 sec thJA thJA Steady State 40 R 1.2 thJC SUD50P04-15 Vishay Siliconix Limit Unit – –50 – –150 –50 b 100 Maximum Unit 18 50 C/W C/W 1.5 www.vishay.com FaxBack 408-970-5600 1 ...

Page 2

... SUD50P04-15 Vishay Siliconix Parameter Symbol Static Drain-Source Breakdown Voltage V (BR)DSS Gate Threshold Voltage V Gate-Body Leakage I Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance DS(on) a Forward Transconductance b Dynamic Input Capacitance Output Capacitance C Reverse Transfer Capacitance ...

Page 3

... Drain-to-Source Voltage (V) DS Document Number: 71176 S-00830—Rev. A, 24-Apr-00 New Product 100 0. 0.03 125 C 0.02 0. 100 iss SUD50P04-15 Vishay Siliconix Transfer Characteristics T = – 125 – Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current 100 120 I – Drain Current (A) D Gate Charge = 120 ...

Page 4

... SUD50P04-15 Vishay Siliconix On-Resistance vs. Junction Temperature 2 2.0 1.5 1.0 0.5 0 –50 – 100 T – Junction Temperature ( C) J Maximum Drain Current vs. Case Temperature 100 125 T – Case Temperature ( C) C Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 ...

Page 5

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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