SUP85N10-10-E3 Vishay, SUP85N10-10-E3 Datasheet

MOSFET Power 100V 85A 250W

SUP85N10-10-E3

Manufacturer Part Number
SUP85N10-10-E3
Description
MOSFET Power 100V 85A 250W
Manufacturer
Vishay
Datasheet

Specifications of SUP85N10-10-E3

Transistor Polarity
N-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.0105 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
85 A
Power Dissipation
250000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Continuous Drain Current Id
85A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
12mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUP85N10-10-E3
Manufacturer:
INFINEON
Quantity:
20 000
Part Number:
SUP85N10-10-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SUP85N10-10-E3
Quantity:
70 000
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve fo voltage derating.
d. When mounted on 1" square PCB (FR-4 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71141
S-61008–Rev. D, 12-Jun-06
ORDERING INFORMATION
Package
TO-220AB
TO-263
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
PRODUCT SUMMARY
V
(BR)DSS
100
(V)
SUP85N10-10
TO-220AB
Top View
G D S
0.0105 at V
0.012 at V
r
DS(on)
DRAIN connected to TAB
N-Channel 100-V (D-S) 175 °C MOSFET
J
b
= 150 °C)
b
GS
GS
(Ω)
= 4.5 V
= 10 V
T
C
= 25 °C (TO-220AB and TO-263)
T
A
A
= 25 °C (TO-263)
I
D
= 25 °C, unless otherwise noted
85
T
L = 0.1 mH
T
C
(A)
C
a
= 125 °C
= 25 °C
PCB Mount (TO-263)
Free Air (TO-220AB)
Tin/Lead Plated
SUP85N10-10
SUB85N10-10
SUB85N10-10
G
Top View
TO-263
D
d
FEATURES
S
• TrenchFET
• 175 °C Maximum Junction Temperature
d
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
AS
DS
GS
D
AS
D
stg
®
Symbol
Power MOSFET
R
R
thJA
thJC
SUP/SUB85N10-10
- 55 to 175
G
Limit
± 20
250
3.75
100
240
280
85
60
75
N-Channel MOSFET
SUP85N10-10-E3
SUB85N10-10-E3
Lead (Pb)-free
a
a
Limit
c
62.5
0.6
40
Vishay Siliconix
D
S
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
RoHS*
COMPLIANT
V
A
Available
1

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SUP85N10-10-E3 Summary of contents

Page 1

... A Symbol ° 125 ° 0 °C (TO-220AB and TO-263 °C (TO-263 PCB Mount (TO-263) Free Air (TO-220AB) SUP/SUB85N10-10 Vishay Siliconix ® Power MOSFET N-Channel MOSFET Lead (Pb)-free SUP85N10-10-E3 SUB85N10-10-E3 Limit V 100 DS V ± 240 280 AS c 250 ...

Page 2

... SUP/SUB85N10-10 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... V − Drain-to-Source Voltage (V) DS Capacitance Document Number: 71141 S-61008–Rev. D, 12-Jun- °C, unless otherwise noted ° °C 125 ° 100 iss SUP/SUB85N10-10 Vishay Siliconix 200 150 100 T = 125 ° ° ° − Gate-to-Source Voltage ( Transfer Characteristics 0.020 0.015 0.010 ...

Page 4

... SUP/SUB85N10-10 Vishay Siliconix TYPICAL CHARACTERISTICS T 2 2.0 1.5 1.0 0.5 0 − Junction Temperature (°C) J On-Resistance vs. Junction Temperature 1000 100 150 ° 0.1 0.00001 0.0001 0.001 t (Sec) in Avalanche Current vs. Time www.vishay.com °C, unless otherwise noted A 75 100 125 150 175 I ( °C ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech- nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71141. ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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