BSS138TA Diodes Inc, BSS138TA Datasheet
BSS138TA
Manufacturer Part Number
BSS138TA
Description
MOSFET Small Signal N-Chnl 50V
Manufacturer
Diodes Inc
Datasheet
1.BSS138TA.pdf
(3 pages)
Specifications of BSS138TA
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.5 Ohm @ 10 V
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.2 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Continuous Drain Current Id
200mA
Drain Source Voltage Vds
50V
On Resistance Rds(on)
3.5ohm
Rds(on) Test Voltage Vgs
5V
Threshold Voltage Vgs Typ
1.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSS138TA
Manufacturer:
ABRACON
Quantity:
30 000
Company:
Part Number:
BSS138TA
Manufacturer:
Diodes/Zetex
Quantity:
229 725
Part Number:
BSS138TA
Manufacturer:
DIODES/美台
Quantity:
20 000
SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – MARCH 1996
PARTMARKING DETAIL
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% (2) Sample test.
(3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage
Drain Current
Static Drain-Source
On-State Resistance (1)
Forward
Transconductance(1)(2)
Input Capacitance (2)
Common Source
Output Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
amb
=25°C
SYMBOL MIN.
BV
V
I
I
R
g
C
C
C
t
t
t
t
GSS
DSS
d(on)
r
d(off)
f
amb
fs
GS(th)
DS(on)
iss
oss
rss
– SS
DSS
=25°C
50
0.5
120
3 - 72
amb
MIN.
10
10
15
25
SYMBOL
V
I
I
V
P
T
D
DM
tot
j
= 25°C unless otherwise stated).
DS
GS
:T
MAX. UNIT CONDITIONS.
1.5
100
0.5
5
100
3.5
50
25
8
stg
V
V
nA
nA
mS
pF
pF
pF
ns
ns
ns
ns
A
A
I
I
V
V
V
V
V
V
V
V
D
D
-55 to +150
GS
DS
DS
DS
GS
DS
DS
DD
=0.25mA, V
=1mA, V
VALUE
=50V, V
=50V, V
=20V, V
=25V,I
=25V, V
= 20V, V
=5V,I
200
800
360
30V, I
50
20
D
D
BSS138
=200mA
D
DS
=200mA
GS
GS
GS
GS
D
=280mA
= V
DS
=0
=0V, T=125°C
=0
=0V, f=1MHz
GS
SOT23
=0V
=0V
GS
UNIT
mW
mA
mA
°C
V
V
G
S
(2)
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BSS138TA Summary of contents
Page 1
SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – MARCH 1996 PARTMARKING DETAIL ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T Pulsed Drain Current Gate-Source Voltage Power Dissipation at T =25°C amb Operating and Storage Temperature ...
Page 2
TYPICAL CHARACTERISTICS 1.0 V =10V 5V GS 0.8 0.6 0.4 0 Pulsed Test -Drain Source Voltage (Volts) DS Saturation Characteristics 500 400 300 V =25V Pulsed Test 200 100 ...
Page 3
BSS138 TYPICAL CHARACTERISTICS =200mA 0.2 0.4 0.6 0.8 Q-Charge (nC) Typical Gate Charge vs. Gate-Source Voltage 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 100 A Typical ...