ZXMN10A08E6TA Diodes Inc, ZXMN10A08E6TA Datasheet - Page 2

• Manufacturer Part Number: ZXMN10A08E6TA
• Description: MOSFET Small Signal 100V N-Chnl UMOS
• Manufacturer: Diodes Inc

Specifications of ZXMN10A08E6TA

• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.25 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.9 A
• Power Dissipation: 1700 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal Characteristics
Maximum Ratings
Drain-Source voltage
Gate-Source voltage
Continuous Drain current
Pulsed Drain current (Note 3)
Continuous Source current (Body diode) (Note 2)
Pulsed Source current (Body diode) (Note 3)
Power dissipation
Linear derating factor
Power dissipation
Linear derating factor
Thermal Resistance, Junction to ambient
Operating and storage temperature range
Notes:
ZXMN10A08E6
Document Number DS31909 Rev. 7 - 2
1. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
2. For a device surface mounted on FR4 PCB measured at t ≤ 5 sec.
3. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse current 300μs - pulse width limited by maximum junction temperature. Refer to Transient
Thermal Impedance graph
Characteristic
Characteristic
@T
V
A
GS
= 25°C unless otherwise specified
= 10V
(Note 2)
T
(Note 1)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
A
= 70°C (Note 2)
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2 of 8
T
Symbol
Symbol
J
V
R
V
, T
I
I
P
DSS
I
DM
I
SM
θ JA
GS
D
S
D
STG
Diodes Incorporated
A Product Line of
-55 to 150
Value
Value
13.6
100
±20
113
1.9
1.5
1.5
8.6
2.5
8.6
1.1
8.8
1.7
73
ZXMN10A08E6
mW/°C
mW/°C
© Diodes Incorporated
°C/W
Unit
Unit
°C
W
W
V
V
A
A
A
A
October 2009