ZXMN10A08E6TA Diodes Inc, ZXMN10A08E6TA Datasheet - Page 3

• Manufacturer Part Number: ZXMN10A08E6TA
• Description: MOSFET Small Signal 100V N-Chnl UMOS
• Manufacturer: Diodes Inc

Specifications of ZXMN10A08E6TA

• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.25 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.9 A
• Power Dissipation: 1700 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal Characteristics
ZXMN10A08E6
Document Number DS31909 Rev. 7 - 2
100m
10m
120
100
80
60
40
20
10
100m
100µ
Transient Thermal Impedance
1
Single Pulse
R
Limited
D=0.5
T
D=0.2
T
DS(on)
amb
amb
V
1m
Safe Operating Area
=25°C
=25°C
DS
Drain-Source Voltage (V)
DC
10m 100m
Pulse Width (s)
1s
1
100ms
10ms
D=0.1
1ms
1
10
D=0.05
100µs
Single Pulse
10
100
100
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100
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
100µ
1
0
20
Pulse Power Dissipation
1m
40
Temperature (°C)
Derating Curve
10m 100m
Diodes Incorporated
Pulse Width (s)
60
A Product Line of
80
1
100 120 140 160
Single Pulse
10
T
amb
ZXMN10A08E6
=25°C
100
© Diodes Incorporated
1k
October 2009