ZXMN10A08E6TA Diodes Inc, ZXMN10A08E6TA Datasheet - Page 6

• Manufacturer Part Number: ZXMN10A08E6TA
• Description: MOSFET Small Signal 100V N-Chnl UMOS
• Manufacturer: Diodes Inc

Specifications of ZXMN10A08E6TA

• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.25 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.9 A
• Power Dissipation: 1700 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics - continued
Test Circuits
ZXMN10A08E6
Document Number DS31909 Rev. 7 - 2
Capacitance v Drain-Source Voltage
90%
10%
V
V
DS
GS
V
600
500
400
300
200
100
G
0.1
0
Q
GS
t
V
Basic gate charge waveform
d(on)
Switching time waveforms
DS
t
(on)
- Drain - Source Voltage (V)
t
r
1
C
Q
ISS
Q
G
GD
Charge
C
OSS
t
10
d(off)
C
t
V
f = 1MHz
(on)
RSS
GS
= 0V
t
r
www.diodes.com
100
6 of 8
Gate-Source Voltage v Gate Charge
10
8
6
4
2
0
0
Switching time test circuit
I
D
Gate charge test circuit
= 1.2A
1
12V
R
G
2
Diodes Incorporated
Q - Charge (nC)
A Product Line of
3
V
regulator
Current
GS
50k
I
G
V
4
GS
5
R
Same as
D.U.T
D
D.U.T
V
ZXMN10A08E6
DS
6
V
DS
= 50V
7
I
V
D
© Diodes Incorporated
DS
V
October 2009
DD
8