ZXMN10A08E6TA Diodes Inc, ZXMN10A08E6TA Datasheet - Page 7

• Manufacturer Part Number: ZXMN10A08E6TA
• Description: MOSFET Small Signal 100V N-Chnl UMOS
• Manufacturer: Diodes Inc

Specifications of ZXMN10A08E6TA

• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.25 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.9 A
• Power Dissipation: 1700 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Package Outline Dimensions
Suggested Pad Layout
ZXMN10A08E6
Document Number DS31909 Rev. 7 - 2
DIM
A1
A2
E1
e1
A
C
D
E
b
L
e
L
0.95 REF
1.90 REF
Min.
0.90
0.00
0.90
0.35
0.09
2.80
2.60
1.50
0.10
0°
0.087
2.2
Millimeters
www.diodes.com
0.026
Max.
0.65
1.45
0.15
1.30
0.50
0.20
3.00
3.00
1.75
0.60
7 of 8
10°
0.037
0.95
inches
0.042
mm
1.06
0.037 REF
0.074 REF
0.0035
0.035
0.014
0.110
0.102
0.059
0.004
Min.
0.35
Diodes Incorporated
0°
0
A Product Line of
Inches
0.057
0.006
0.051
0.019
0.008
0.118
0.118
0.069
0.002
Max.
ZXMN10A08E6
10°
© Diodes Incorporated
October 2009