VP0550N3-G Supertex, VP0550N3-G Datasheet - Page 4

• Manufacturer Part Number: VP0550N3-G
• Description: MOSFET Small Signal 500V 125Ohm
• Manufacturer: Supertex

Specifications of VP0550N3-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 60 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.05 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
1.15
1.10
1.05
1.00
0.95
0.90
-0.4
-0.2
80
60
40
20
0
0
-50
0
0
Capacitance vs. Drain-to-Source Voltage
V
DS
BV
= -25V
DSS
-2
Transfer Characteristics
-10
0
Variation with Temperature
V
V
GS
-4
DS
T
(volts)
j
-20
50
(volts)
(°C)
●
-6
1235 Bordeaux Drive, Sunnyvale, CA 94089
100
-30
T
A
f = 1MHz
-8
= 150 °C
(cont.)
C
ISS
150
-10
-40
4
1.10
1.05
1.00
0.95
0.90
0.85
200
160
120
-10
80
40
-8
-6
-4
-2
0
0
-50
0
0
●
V
Tel: [phone]
(th)
Gate Drive Dynamic Characteristics
V
On-Resistance vs. Drain Current
GS
and R
30pF
-0.05
0.2
= -5V
0
Q
DS
R
DS(ON)
G
I
D
Variation with Temperature
-0.10
(nanocoulombs)
0.4
(amperes)
T
j
@ -10V, -10mA
50
●
V
(°C)
V
GS
www.supertex.com
83pF
-0.15
DS
0.6
= -10V
V
= -10V
(th)
V
100
DS
@ -1mA
-0.20
0.8
=
-40V
-0.25
150
1.0
VP0550
2.0
1.6
1.2
0.8
0.4
0