SI4914BDY-T1-E3 Vishay, SI4914BDY-T1-E3 Datasheet

MOSFET Small Signal 30V 8.4/8.0A 2.1/3.1

SI4914BDY-T1-E3

Manufacturer Part Number
SI4914BDY-T1-E3
Description
MOSFET Small Signal 30V 8.4/8.0A 2.1/3.1
Manufacturer
Vishay
Datasheet

Specifications of SI4914BDY-T1-E3

Transistor Polarity
N-Channel
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.021 Ohm @ 10 V @ Channel 1
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
6.7 A @ Channel 1 or 7.4 A @ Channel 2
Power Dissipation
1700 mW @ Channel 1 or 2000 mW @ Channel 2
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Continuous Drain Current Id
7.4A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
16.5mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
2.7V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

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Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Package limited.
Document Number: 69654
S09-2109-Rev. E, 12-Oct-09
Ordering Information: Si4914BDY-T1-E3 (Lead (Pb)-free)
Channel-1
Channel-2
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source-Drain Diode Current
PulseD Source-Drain Current
Single-Pulse Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
PRODUCT SUMMARY
SCHOTTKY PRODUCT SUMMARY
V
DS
30
(V)
G
D
D
S
1
1
2
2
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
C
V
1
2
3
4
= 25 °C.
DS
30
(V)
Si4914BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
Diode Forward Voltage
T op V i e w
SO-8
0.027 at V
0.025 at V
0.021 at V
0.020 at V
0.50 V at 1.0 A
R
V
J
a, b
DS(on)
SD
= 150 °C)
(V)
8
7
6
5
GS
GS
GS
GS
(Ω)
= 4.5 V
= 4.5 V
= 10 V
= 10 V
G
S
S
S
1
1
1
1
a, b
/D
/D
/D
2
2
2
I
D
8.4
7.4
8
8
(A)
d
d
a
A
= 25 °C, unless otherwise noted
I
Q
F
2.0
g
T
T
T
T
T
T
L = 0.1 mH
T
T
T
T
(A)
6.7
7.0
(Typ.)
C
C
C
C
C
A
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• LITTLE FOOT
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
• Notebook PC
Symbol
T
Definition
- System Power dc-to-dc
J
V
V
E
I
I
I
P
, T
DM
SM
I
I
AS
DS
GS
D
AS
S
D
stg
N-Channel 1
N-Channel 2
g
MOSFET
MOSFET
G
G
and UIS Tested
1
2
Channel-1
®
6.7
5.3
1.0
1.7
1.1
8.4
6.7
2.4
2.7
1.7
Plus Integrated Schottky
40
40
b, c
b, c
b, c
b, c
b, c
- 55 to 150
D
S
1
2
11.2
30
20
15
Channel-2
7.4
5.7
1.1
2.0
1.2
Schottky Diode
7.4
2.8
3.1
2.0
40
40
8
Vishay Siliconix
d
b, c
b, c
b, c
b, c
b, c
S
Si4914BDY
1
/D
2
www.vishay.com
Unit
mJ
°C
W
V
A
1

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SI4914BDY-T1-E3 Summary of contents

Page 1

... Ordering Information: Si4914BDY-T1-E3 (Lead (Pb)-free) Si4914BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a, b Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source-Drain Diode Current PulseD Source-Drain Current Single-Pulse Avalanche Current Single-Pulse Avalanche Energy ...

Page 2

... Si4914BDY Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 120 °C/W for Channel 1 and 115 °C/W for Channel 2. MOSFET SPECIFICATIONS T Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Δ ...

Page 3

... A, dI/dt = 100 A/µ 2.2 A, dI/dt = 100 A/µ 2.2 A, dI/dt = 100 A/µ 2.2 A, dI/dt = 100 A/µ 2.2 A, dI/dt = 100 A/µ 2.2 A, dI/dt = 100 A/µ 2.2 A, dI/dt = 100 A/µ 2.2 A, dI/dt = 100 A/µs F Si4914BDY Vishay Siliconix a Min. Typ. Max. Unit Ch-2 8 ...

Page 4

... Si4914BDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.5 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.05 0. 0. Drain Current (A) D On-Resistance vs. Drain Current 3.2 6 Total Gate Charge (nC) g Gate Charge www.vishay.com thru 1.5 2.0 2 9.6 12.8 16.0 2 ...

Page 5

... Limited DS(on 0 °C A Single Pulse 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area Si4914BDY Vishay Siliconix T = 125 ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.01 0.1 1 Time (s) Single Pulse Power, Junction-to-Ambient 100 ms ...

Page 6

... Si4914BDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3.5 2.8 2.1 1.4 0 Case Temperature (°C) C Power, Junction-to-Foot * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 7

... Single Pulse 0. Document Number: 69654 S09-2109-Rev. E, 12-Oct-09 Single Pulse - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4914BDY Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 120 °C/W thJA ( ...

Page 8

... Si4914BDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 0.5 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.040 0.034 0.028 0.022 V 0.016 0.010 Drain Current (A) D On-Resistance vs. Drain Current 3.4 6 Total Gate Charge (nC) g Gate Charge www.vishay.com 1.5 2.0 2.5 ...

Page 9

... 100 125 150 100 Limited DS(on 0 °C A Single Pulse 0.01 0 Drain-to-Source Voltage ( > minimum V at which Safe Operating Area Si4914BDY Vishay Siliconix 0.10 0.08 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 100 0.01 0.1 1 Time (s) Single Pulse Power, Junction-to-Ambient 1 ms ...

Page 10

... Si4914BDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4.0 3.2 2.4 1.6 0 Case Temperature (°C) C Power, Junction-to-Foot * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 11

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69654. Document Number: 69654 S09-2109-Rev. E, 12-Oct- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4914BDY Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 115 ° ...

Page 12

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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