TC7SA32F(TE85L,F) Toshiba, TC7SA32F(TE85L,F) Datasheet

TC7SA32F(TE85L,F)

Manufacturer Part Number

TC7SA32F(TE85L,F)

Description

Gates (AND / NAND / OR / NOR) 2-Input OR Gate 5Pin

Manufacturer

Toshiba

Datasheet

1.TC7SA32FUTE85LF.pdf (8 pages)

Specifications of TC7SA32F(TE85L,F)

Product

Maximum Operating Temperature

+ 85 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 40 C

Number Of Circuits

Single

Package / Case

SSOP-5

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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2-Input OR Gate

Features

•

Marking

Absolute Maximum Ratings

Supply voltage

DC input voltage

DC output voltage

Input diode current

Output diode current

DC output current

Power dissipation

DC V

Storage temperature range

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

Note 1: V

Note 2: High or Low State. I

Note 3: V

Low voltage operation : V

High speed operation : t

High output current

3.6-V tolerant inputs.

3.6-V power down protection output.

TC74VCX32FT equivalent.

/ground current

Characteristics

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

OUT

V 4

= 0 V

< GND

TC7SA32F,TC7SA32FU

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

: t

: I

Product name

OUT

= 2.8 ns (max) (V

= 3.7 ns (max) (V

= 7.4 ns (max) (V

Symbol

= 1.8 to 3.6 V

OUT

stg

absolute maximum rating must be observed.

= ±24 mA (min) (V

= ±18 mA (min) (V

= ±6 mA (min) (V

(Ta = 25°C)

−0.5 to V

−0.5 to 4.6 (Note 1)

−0.5 to 4.6

−65 to 150

Rating

= 3.0 to 3.6 V)

= 2.3 to 2.7 V)

= 1.8 V)

±100

−50

±50

200

+0.5 (Note 2)

= 1.8 V)

= 3.0 V)

= 2.3 V)

(Note 3)

Unit

°C

Weight

SSOP5-P-0.95 : 0.016 g (typ.)

SSOP5-P-0.65A : 0.006 g (typ.)

TC7SA32F

TC7SA32FU

Pin Assignment

IN B

IN A

GND

TC7SA32F/FU

(top view)

2009-07-29

5 V

(SMV)

(USV)

OUT Y

Related parts for TC7SA32F(TE85L,F)

TC7SA32F(TE85L,F) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc) ...

Page 2

IEC Logic Symbol IN A > Operating Ranges Characteristics Supply voltage Input voltage Output voltage Output current Operating temperature range Input rise and fall time Note 4: Data retention only = 0 V Note ...

Page 3

Electrical Characteristics DC Characteristics (Ta = −40 to 85°C, 2.7 V < V Characteristics High level Input voltage Low level High level Output voltage Low level Input leakage current Power off leakage current Quiescent supply current Increase in I per ...

Page 4

V < Characteristics Characteristics High level Input voltage Low level High level Output voltage Low level Input leakage current Power off leakage current Quiescent supply current AC Characteristics (Ta = −40 ...

Page 5

AC Test Circuit AC Wareform Input Output Output Measure Figure pLH pHL Symbol 3.3 ± 0 ...

Page 6

Package Dimensions Weight: 0.016 g (typ.) 6 TC7SA32F/FU 2009-07-29 ...

Page 7

Package Dimensions Weight: 0.006 g (typ.) 7 TC7SA32F/FU 2009-07-29 ...

Page 8

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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