S29GL01GP12TFI010 Spansion Inc., S29GL01GP12TFI010 Datasheet - Page 27

Flash 3V 1 Gb Mirrorbit highest address120ns

S29GL01GP12TFI010

Manufacturer Part Number
S29GL01GP12TFI010
Description
Flash 3V 1 Gb Mirrorbit highest address120ns
Manufacturer
Spansion Inc.
Datasheet

Specifications of S29GL01GP12TFI010

Memory Type
NOR
Memory Size
1 Gbit
Access Time
110 ns
Data Bus Width
8 bit, 16 bit
Architecture
Uniform
Interface Type
Page-mode
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.7 V
Maximum Operating Current
50 mA
Mounting Style
SMD/SMT
Operating Temperature
+ 85 C
Package / Case
TSOP-56
Memory Configuration
128K X 16
Ic Interface Type
Parallel
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
BGA
No. Of Pins
56
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
S29GL01GP12TFI010
Manufacturer:
CYPRE
Quantity:
20 000
November 28, 2007 S29GL-P_00_A8
The write-buffer “embedded” programming operation can be suspended using the standard suspend/resume
commands. Upon successful completion of the Write Buffer Programming operation, the device returns to
READ mode.
The Write Buffer Programming Sequence is ABORTED under any of the following conditions:
The ABORT condition is indicated by DQ1 = 1, DQ7 = DATA# (for the “last address location loaded”), DQ6 =
TOGGLE, DQ5 = 0. This indicates that the Write Buffer Programming Operation was ABORTED. A “Write-to-
Buffer-Abort reset” command sequence is required when using the write buffer Programming features in
Unlock Bypass mode. Note that the Secured Silicon sector, autoselect, and CFI functions are unavailable
when a program operation is in progress.
Write buffer programming is allowed in any sequence of memory (or address) locations. These flash devices
are capable of handling multiple write buffer programming operations on the same write buffer address range
without intervening erases.
Use of the write buffer is strongly recommended for programming when multiple words are to be
programmed.
Load a value that is greater than the page buffer size during the “Number of Locations to Program” step.
Write to an address in a sector different than the one specified during the Write-Buffer-Load command.
Write an Address/Data pair to a different write-buffer-page than the one selected by the “Starting Address”
during the “write buffer data loading” stage of the operation.
Writing anything other than the Program to Buffer Flash Command after the specified number of “data
load” cycles.
D a t a
S h e e t
S29GL-P MirrorBit
( P r e l i m i n a r y )
®
Flash Family
27

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