S29GL01GP12TFI010 Spansion Inc., S29GL01GP12TFI010 Datasheet - Page 63

• Manufacturer Part Number: S29GL01GP12TFI010
• Description: Flash 3V 1 Gb Mirrorbit highest address120ns
• Manufacturer: Spansion Inc.

Specifications of S29GL01GP12TFI010

• Memory Type: NOR
• Memory Size: 1 Gbit
• Access Time: 110 ns
• Data Bus Width: 8 bit, 16 bit
• Architecture: Uniform
• Interface Type: Page-mode
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Maximum Operating Current: 50 mA
• Mounting Style: SMD/SMT
• Operating Temperature: + 85 C
• Package / Case: TSOP-56
• Memory Configuration: 128K X 16
• Ic Interface Type: Parallel
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: BGA
• No. Of Pins: 56
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Notes
1. Not 100% tested.
2. See
3. For 1–32 words/1–64 bytes programmed.
4. Effective write buffer specification is based upon a 32-word/64-byte write buffer operation.
5. Unless otherwise indicated, AC specifications are tested with V
November 28, 2007 S29GL-P_00_A8
JEDEC
t
t
WHWH1
WHWH2
t
t
t
t
t
t
t
t
t
t
11.7.4
EHWH
AVWL
DVEH
EHDX
GHEL
WLEL
ELAX
ELEH
EHEL
AVAV
Parameter
AC Characteristics on page 56
t
t
WHWH1
WHWH2
t
t
t
t
CEPH
OEPH
t
Std.
t
GHEL
t
t
t
t
ASO
t
AHT
t
t
t
CPH
WC
WS
WH
AH
DS
DH
CP
AS
S29GL-P Alternate CE# Controlled Erase and Program Operations
Description
(Notes)
Write Cycle Time
Address Setup Time
Address Setup Time to OE# low during toggle bit polling
Address Hold Time
Address Hold Time From CE# or OE# high during toggle bit polling
Data Setup Time
Data Hold Time
CE# High during toggle bit polling
OE# High during toggle bit polling
Read Recovery Time Before Write
(OE# High to WE# Low)
WE# Setup Time
WE# Hold Time
CE# Pulse Width
CE# Pulse Width High
Write Buffer Program Operation (Notes 2, 3)
Effective Write Buffer Program Operation (Notes 2, 4)
Effective Accelerated Write Buffer Program Operation
(Notes 2, 4)
Program Operation
Accelerated Programming Operation
Sector Erase Operation
Table 11.7 S29GL-P Alternate CE# Controlled Erase and Program Operations
D a t a
for more information.
(Note 1)
(Note 2)
S h e e t
(Note 2)
S29GL-P MirrorBit
IO
( P r e l i m i n a r y )
(Note 2)
= 1.8 V and V
CC
®
Flash Family
= 3.0 V.
Per Word
Per Word
Word
Word
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Typ
Typ
90
90
100
100
Speed Options
13.5
480
110
110
0.5
15
45
30
20
20
35
30
15
60
54
0
0
0
0
0
0
120
120
130
130
Unit
sec
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
µs
µs
ns
63