S29GL256P11TFI010 Spansion Inc., S29GL256P11TFI010 Datasheet - Page 16

Flash 3V 256Mb Mirrorbit highest address110ns

S29GL256P11TFI010

Manufacturer Part Number
S29GL256P11TFI010
Description
Flash 3V 256Mb Mirrorbit highest address110ns
Manufacturer
Spansion Inc.

Specifications of S29GL256P11TFI010

Memory Type
NOR
Memory Size
256 Mbit
Access Time
110 ns
Data Bus Width
8 bit, 16 bit
Architecture
Uniform
Interface Type
Page-mode
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.7 V
Maximum Operating Current
50 mA
Mounting Style
SMD/SMT
Operating Temperature
+ 85 C
Package / Case
TSOP-56
Memory Configuration
128K X 16
Ic Interface Type
Parallel
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
56
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

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Quantity
Price
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S29GL256P11TFI010
Quantity:
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Manufacturer:
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7. Device Operations
7.1
Legend
L = Logic Low = V
Notes
1. Addresses are AMax:A0 in word mode; A
2. If WP# = V
3. D
14
Operation
Read
Write (Program/Erase)
Accelerated Program
Standby
Output Disable
Reset
factory (The Secured Silicon Sector can be factory protected depending on version ordered.)
IN
or D
OUT
Device Operation Table
IL
, on the outermost sector remains protected. If WP# = V
as required by command sequence, data polling, or sector protect algorithm.
IL
, H = Logic High = V
Note
This table has been condensed to show sector-related information for an entire device on a single page. Sectors and their address ranges
that are not explicitly listed (such as SA001-SA510) have sector starting and ending addresses that form the same pattern as all other
sectors of that size. For example, all 128 Kb sectors have the pattern xxx0000h-xxxFFFFh.
This section describes the read, program, erase, handshaking, and reset features of the Flash devices.
Operations are initiated by writing specific commands or a sequence with specific address and data patterns
into the command registers (see
occupy any addressable memory location; rather, it is composed of latches that store the commands, along
with the address and data information needed to execute the command. The contents of the register serve as
input to the internal state machine and the state machine outputs dictate the function of the device. Writing
incorrect address and data values or writing them in an improper sequence may place the device in an
unknown state, in which case the system must write the reset command to return the device to the reading
array data mode.
The device must be setup appropriately for each operation.
control pin for any particular operation.
64 Kword/128 Kb
Uniform Sector
V
CC
Size
CE#
±
X
L
L
L
L
0.3 V
IH
, V
HH
Max
OE#
= 11.5–12.5V, X = Don’t Care, A
:A-1 in byte mode.
H
H
X
H
X
L
Sector
Count
128
D a t a
WE#
Table 6.4 S29GL128P Sector & Memory Address Map
H
X
H
X
L
L
S29GL-P MirrorBit
Table 7.1 Device Operations
V
Table 12.1
S h e e t
CC
RESET#
Sector
Range
SA127
SA00
±
H
H
H
H
L
IH
:
0.3 V
, the outermost sector is unprotected. All sectors are unprotected when shipped from the
IN
through
( A d v a n c e
WP#/ACC
= Address In, D
(Note 2)
TM
V
Flash Family
X
H
X
X
HH
Address Range (16-bit)
Table
0000000h - 000FFFFh
07F0000 - 7FFFFF
Addresses
IN
12.4). The command register itself does not
(Note 1)
Table 7.1
= Data In, D
A
A
A
X
X
X
IN
IN
IN
:
I n f o r m a t i o n )
OUT
describes the required state of each
DQ0–DQ7
(Note 3)
(Note 3)
High-Z
High-Z
High-Z
= Data Out
D
OUT
S29GL-P_00_A3 November 21, 2006
BYTE#= V
Sector Starting Address
(Note 3)
(Note 3)
Sector Ending Address
High-Z
High-Z
High-Z
D
OUT
DQ8–DQ15
IH
Notes
BYTE#= V
DQ8–DQ14
DQ15 = A-1
= High-Z,
High-Z
High-Z
High-Z
IL

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